Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode

P. Susthitha Menon, S. Kalthom Tasirin, Ibrahim Ahmad, Siti Fazlili Abdullah

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si MQW structure as compared to a photodiode developed on bulk silicon. Hence, 5 periods of stacked SiGe MQW were grown on Si(100) substrate with a buried oxide (BOX) layer. A lateral PIN photodiode consisting of the SiGe/Si MQW layers as the active absorption layer with intensity response in the 800-1600 nm wavelength range was demonstrated. The results obtained for total quantum efficiency (TQE) and response speed were 26% and 16.7 ps (20.8 GHz) respectively for design parameters of intrinsic region length of 6 μm, photo-absorption layer thickness of 0.305 μm, incident optical power of 1 mW/cm2 and bias voltage of 2 V. In summary, the incorporation of SiGe MQWs into the standard lateral PIN photodiode has increased both the detection wavelength range up to the infrared region and the frequency response of the device.

Original languageEnglish
Pages (from-to)507-510
Number of pages4
JournalJournal of Nanoelectronics and Optoelectronics
Volume9
Issue number4
DOIs
Publication statusPublished - 01 Jan 2014

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Germanium
Silicon
Photodiodes
Semiconductor quantum wells
Wavelength
Infrared radiation
Optical fiber communication
Bias voltage
Quantum efficiency
Oxides
Frequency response
Sensors
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode",
abstract = "Silicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si MQW structure as compared to a photodiode developed on bulk silicon. Hence, 5 periods of stacked SiGe MQW were grown on Si(100) substrate with a buried oxide (BOX) layer. A lateral PIN photodiode consisting of the SiGe/Si MQW layers as the active absorption layer with intensity response in the 800-1600 nm wavelength range was demonstrated. The results obtained for total quantum efficiency (TQE) and response speed were 26{\%} and 16.7 ps (20.8 GHz) respectively for design parameters of intrinsic region length of 6 μm, photo-absorption layer thickness of 0.305 μm, incident optical power of 1 mW/cm2 and bias voltage of 2 V. In summary, the incorporation of SiGe MQWs into the standard lateral PIN photodiode has increased both the detection wavelength range up to the infrared region and the frequency response of the device.",
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Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode. / Menon, P. Susthitha; Tasirin, S. Kalthom; Ahmad, Ibrahim; Abdullah, Siti Fazlili.

In: Journal of Nanoelectronics and Optoelectronics, Vol. 9, No. 4, 01.01.2014, p. 507-510.

Research output: Contribution to journalArticle

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AU - Menon, P. Susthitha

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AU - Ahmad, Ibrahim

AU - Abdullah, Siti Fazlili

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