Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer

Koh Wen Shi, Boon Kar Yap, Noor Azrina Talik, Lo Wai Yew

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

This paper presents the optimization work of 355 nm ultraviolet (UV) laser diode ablation process for CMOS 45 nm Copper (Cu) low-k semiconductor wafer. The micromachining parameters included laser power, laser frequency, feed speed, and defocus amount were optimized via design of experiment (DOE). Package reliability stressing tests were carried out as part of the efforts to validate the robustness. The results show that high repetition rate, low laser pulse energy and a high pulse overlap produced zero dicing defects. The laser groove depth increased as the laser pulse energy increased. It is shown that, laser grooving is one of the best solutions to choose for dicing quality, throughput and yield improvements for CMOS 45 nm Cu low-k wafer dicing.

Original languageEnglish
Pages (from-to)360-369
Number of pages10
JournalProcedia Engineering
Volume184
DOIs
Publication statusPublished - 01 Jan 2017
EventAdvances in Material and Processing Technologies Conference, AMPT 2017 - Chennai, India
Duration: 11 Dec 201714 Dec 2017

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Ultraviolet lasers
Ablation
Semiconductor lasers
Semiconductor materials
Copper
Laser pulses
Lasers
Micromachining
Design of experiments
Throughput
Defects

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Shi, Koh Wen ; Yap, Boon Kar ; Talik, Noor Azrina ; Yew, Lo Wai. / Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer. In: Procedia Engineering. 2017 ; Vol. 184. pp. 360-369.
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Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer. / Shi, Koh Wen; Yap, Boon Kar; Talik, Noor Azrina; Yew, Lo Wai.

In: Procedia Engineering, Vol. 184, 01.01.2017, p. 360-369.

Research output: Contribution to journalConference article

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