The characterization of KrF photoresists and the effect of different chromophore bulkiness on line edge roughness (LER) for submicron technology

Ahmad Yusri, Mohamed Bakri, Mohd Jeffery Manaf, K. I A Wahab, Ibrahim Ahmad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This research characterizes line edge roughness (LER), determines which resist has lowest LER for all process variations, and investigates the effect of chromophore bulkiness on LER. Three KrF photoresists with different chromophore bulkiness were evaluated. The characteristics evaluated were depth of focus (DOF), profile and resolution, LER, exposure latitude, iso-dense bias and CD linearity. Different feature sizes were tested from 100nm to 190nm. From the results, it is seen that resist P1 has the lowest average LER for all process conditions and variations with a 3 sigma value of 10.074. This is followed by resist P5 and P6 with a 3 sigma LER value of 12.562 and 15.468. It is concluded that high chromophore bulkiness results in high UV activation. This is seen from the LER for resist P6 that is the highest out of all the photoresist. Reducing the chromophore bulkiness will reduce LER until it reaches a saturation point where reduction will not result in any lower LER. Reducing the chromophore bulkiness further beyond the saturation point will in fact increase the LER

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages955-964
Number of pages10
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 29 Nov 200601 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period29/11/0601/12/06

Fingerprint

Photoresists
Chromophores
Surface roughness
Chemical activation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yusri, A., Bakri, M., Manaf, M. J., Wahab, K. I. A., & Ahmad, I. (2006). The characterization of KrF photoresists and the effect of different chromophore bulkiness on line edge roughness (LER) for submicron technology. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 955-964). [4266764] https://doi.org/10.1109/SMELEC.2006.380781
Yusri, Ahmad ; Bakri, Mohamed ; Manaf, Mohd Jeffery ; Wahab, K. I A ; Ahmad, Ibrahim. / The characterization of KrF photoresists and the effect of different chromophore bulkiness on line edge roughness (LER) for submicron technology. ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. pp. 955-964
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Yusri, A, Bakri, M, Manaf, MJ, Wahab, KIA & Ahmad, I 2006, The characterization of KrF photoresists and the effect of different chromophore bulkiness on line edge roughness (LER) for submicron technology. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266764, pp. 955-964, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 29/11/06. https://doi.org/10.1109/SMELEC.2006.380781

The characterization of KrF photoresists and the effect of different chromophore bulkiness on line edge roughness (LER) for submicron technology. / Yusri, Ahmad; Bakri, Mohamed; Manaf, Mohd Jeffery; Wahab, K. I A; Ahmad, Ibrahim.

ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 955-964 4266764.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Yusri A, Bakri M, Manaf MJ, Wahab KIA, Ahmad I. The characterization of KrF photoresists and the effect of different chromophore bulkiness on line edge roughness (LER) for submicron technology. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 955-964. 4266764 https://doi.org/10.1109/SMELEC.2006.380781