Temperature dependence of leakage current in InAs avalanche photodiodes

Pin Jern Ker, Andrew R.J. Marshall, Andrey B. Krysa, John P.R. David, Chee Hing Tan

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm2 at 290 K and 910 MΩ-cm2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n2i whereas the surface leakage current is proportional to ni from 77 K to 290 K, where ni is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.

Original languageEnglish
Article number5871995
Pages (from-to)1123-1128
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number8
DOIs
Publication statusPublished - 01 Aug 2011

Fingerprint

Avalanche photodiodes
Leakage currents
avalanches
photodiodes
leakage
Photodiodes
temperature dependence
Dark currents
Temperature
Carrier concentration
Current density
Activation energy
dark current
multiplication
unity
current density
activation energy
products

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R., & Tan, C. H. (2011). Temperature dependence of leakage current in InAs avalanche photodiodes. IEEE Journal of Quantum Electronics, 47(8), 1123-1128. [5871995]. https://doi.org/10.1109/JQE.2011.2159194
Ker, Pin Jern ; Marshall, Andrew R.J. ; Krysa, Andrey B. ; David, John P.R. ; Tan, Chee Hing. / Temperature dependence of leakage current in InAs avalanche photodiodes. In: IEEE Journal of Quantum Electronics. 2011 ; Vol. 47, No. 8. pp. 1123-1128.
@article{1bd050e4688447938afddc2816ab9e0f,
title = "Temperature dependence of leakage current in InAs avalanche photodiodes",
abstract = "Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm2 at 290 K and 910 MΩ-cm2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n2i whereas the surface leakage current is proportional to ni from 77 K to 290 K, where ni is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.",
author = "Ker, {Pin Jern} and Marshall, {Andrew R.J.} and Krysa, {Andrey B.} and David, {John P.R.} and Tan, {Chee Hing}",
year = "2011",
month = "8",
day = "1",
doi = "10.1109/JQE.2011.2159194",
language = "English",
volume = "47",
pages = "1123--1128",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

Temperature dependence of leakage current in InAs avalanche photodiodes. / Ker, Pin Jern; Marshall, Andrew R.J.; Krysa, Andrey B.; David, John P.R.; Tan, Chee Hing.

In: IEEE Journal of Quantum Electronics, Vol. 47, No. 8, 5871995, 01.08.2011, p. 1123-1128.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependence of leakage current in InAs avalanche photodiodes

AU - Ker, Pin Jern

AU - Marshall, Andrew R.J.

AU - Krysa, Andrey B.

AU - David, John P.R.

AU - Tan, Chee Hing

PY - 2011/8/1

Y1 - 2011/8/1

N2 - Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm2 at 290 K and 910 MΩ-cm2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n2i whereas the surface leakage current is proportional to ni from 77 K to 290 K, where ni is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.

AB - Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm2 at 290 K and 910 MΩ-cm2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n2i whereas the surface leakage current is proportional to ni from 77 K to 290 K, where ni is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.

UR - http://www.scopus.com/inward/record.url?scp=80755153838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80755153838&partnerID=8YFLogxK

U2 - 10.1109/JQE.2011.2159194

DO - 10.1109/JQE.2011.2159194

M3 - Article

AN - SCOPUS:80755153838

VL - 47

SP - 1123

EP - 1128

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 8

M1 - 5871995

ER -