Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode

P. Susthitha Menon, S. Kalthom Tasirin, Ibrahim Ahmad, Siti Fazlili Abdullah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A high performance lateral silicon photodiode was designed on a Silicon-on-insulator (SOI)-based substrate with SiGe/Si quantum dot technology. The device has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. An L9 array from Taguchi method was used to optimize the device design. The simulator of ATHENA and ATLAS were used for photodiode fabrication process and electrical characterization, respectively. The results obtained for responsivity and frequency response after the optimization approach were 0.36 A/W and 21.2 GHz respectively which correspond to the optimization value for the intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2 and bias voltage of 3.5 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method.

Original languageEnglish
Title of host publicationMicro/Nano Science and Engineering
PublisherTrans Tech Publications
Pages646-650
Number of pages5
ISBN (Print)9783038350866
DOIs
Publication statusPublished - 01 Jan 2014
EventJoint International Conference on Nanoscience, Engineering and Management, BOND21 - Penang, Malaysia
Duration: 19 Aug 201321 Aug 2013

Publication series

NameAdvanced Materials Research
Volume925
ISSN (Print)1022-6680

Other

OtherJoint International Conference on Nanoscience, Engineering and Management, BOND21
CountryMalaysia
CityPenang
Period19/08/1321/08/13

Fingerprint

Photodiodes
Semiconductor quantum dots
Silicon
Optical fiber communication
Fabrication
Taguchi methods
Bias voltage
Frequency response
Simulators
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Menon, P. S., Tasirin, S. K., Ahmad, I., & Abdullah, S. F. (2014). Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode. In Micro/Nano Science and Engineering (pp. 646-650). (Advanced Materials Research; Vol. 925). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/AMR.925.646
Menon, P. Susthitha ; Tasirin, S. Kalthom ; Ahmad, Ibrahim ; Abdullah, Siti Fazlili. / Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode. Micro/Nano Science and Engineering. Trans Tech Publications, 2014. pp. 646-650 (Advanced Materials Research).
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Menon, PS, Tasirin, SK, Ahmad, I & Abdullah, SF 2014, Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode. in Micro/Nano Science and Engineering. Advanced Materials Research, vol. 925, Trans Tech Publications, pp. 646-650, Joint International Conference on Nanoscience, Engineering and Management, BOND21, Penang, Malaysia, 19/08/13. https://doi.org/10.4028/www.scientific.net/AMR.925.646

Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode. / Menon, P. Susthitha; Tasirin, S. Kalthom; Ahmad, Ibrahim; Abdullah, Siti Fazlili.

Micro/Nano Science and Engineering. Trans Tech Publications, 2014. p. 646-650 (Advanced Materials Research; Vol. 925).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - A high performance lateral silicon photodiode was designed on a Silicon-on-insulator (SOI)-based substrate with SiGe/Si quantum dot technology. The device has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. An L9 array from Taguchi method was used to optimize the device design. The simulator of ATHENA and ATLAS were used for photodiode fabrication process and electrical characterization, respectively. The results obtained for responsivity and frequency response after the optimization approach were 0.36 A/W and 21.2 GHz respectively which correspond to the optimization value for the intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2 and bias voltage of 3.5 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method.

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Menon PS, Tasirin SK, Ahmad I, Abdullah SF. Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode. In Micro/Nano Science and Engineering. Trans Tech Publications. 2014. p. 646-650. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.925.646