Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

Khairil Ezwan Kaharudin, Fauziyah Salehuddin, Abdul Hamid Hamidon, Muhammad Nazirul Ifwat Abd Aziz, Ibrahim Ahmad

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The miniaturization in the size of planar MOSFET device seems to be limited when it reaches to 22nm technology node. In this paper, the vertical double gate architecture of MOSFET device with ultrathin Si- pillar was introduced by keeping both silicon dioxide (SiO 2 ) and polysilicon as the main materials. The proposed MOSFET architecture was known as Ultrathin Pillar Vertical Double Gate (VDG) MOSFET device and it was integrated with polysilicon-on-insulator (PSOI) technology for a superior electrical performance. The virtual device fabrication and characterization were done by using ATHENA and ATLAS modules of SILVACO Internationals. The process parameters of the device were then optimized by utilizing L 27 orthogonal array of Taguchi method in order to obtain the highest value of drive current (ION) and the lowest value of leakage current (I OFF ). The highest value of I ON /I OFF ratio after an optimization approach was observed to be 2.154x 10 12 .

Original languageEnglish
Pages (from-to)19-26
Number of pages8
JournalJurnal Teknologi
Volume77
Issue number21
DOIs
Publication statusPublished - 01 Jan 2015

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MOSFET devices
Polysilicon
Taguchi methods
Leakage currents
Silica
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kaharudin, Khairil Ezwan ; Salehuddin, Fauziyah ; Hamidon, Abdul Hamid ; Aziz, Muhammad Nazirul Ifwat Abd ; Ahmad, Ibrahim. / Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio. In: Jurnal Teknologi. 2015 ; Vol. 77, No. 21. pp. 19-26.
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Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio. / Kaharudin, Khairil Ezwan; Salehuddin, Fauziyah; Hamidon, Abdul Hamid; Aziz, Muhammad Nazirul Ifwat Abd; Ahmad, Ibrahim.

In: Jurnal Teknologi, Vol. 77, No. 21, 01.01.2015, p. 19-26.

Research output: Contribution to journalArticle

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