Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging

Pin Jern Ker, Andrew R.J. Marshall, Chee Hing Tan, John P.R. David

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging.

Original languageEnglish
Title of host publication2016 IEEE 6th International Conference on Photonics, ICP 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467381536
DOIs
Publication statusPublished - 12 Jul 2016
Event6th IEEE International Conference on Photonics, ICP 2016 - Kuching, Sarawak, Malaysia
Duration: 14 Mar 201617 Mar 2016

Publication series

Name2016 IEEE 6th International Conference on Photonics, ICP 2016

Other

Other6th IEEE International Conference on Photonics, ICP 2016
CountryMalaysia
CityKuching, Sarawak
Period14/03/1617/03/16

Fingerprint

Avalanche photodiodes
Infrared imaging
Passivation
avalanches
low noise
passivity
photodiodes
Diodes
diodes
mesas
Silicon nitride
silicon nitrides
Silica
silicon dioxide
Insulating materials
electric potential
Bias voltage
dioxides
Leakage currents
insulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

Cite this

Ker, P. J., Marshall, A. R. J., Tan, C. H., & David, J. P. R. (2016). Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. In 2016 IEEE 6th International Conference on Photonics, ICP 2016 [7510018] (2016 IEEE 6th International Conference on Photonics, ICP 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICP.2016.7510018
Ker, Pin Jern ; Marshall, Andrew R.J. ; Tan, Chee Hing ; David, John P.R. / Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. 2016 IEEE 6th International Conference on Photonics, ICP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 IEEE 6th International Conference on Photonics, ICP 2016).
@inproceedings{2968a7e65bc64c149728d3d2669e96c7,
title = "Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging",
abstract = "The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging.",
author = "Ker, {Pin Jern} and Marshall, {Andrew R.J.} and Tan, {Chee Hing} and David, {John P.R.}",
year = "2016",
month = "7",
day = "12",
doi = "10.1109/ICP.2016.7510018",
language = "English",
series = "2016 IEEE 6th International Conference on Photonics, ICP 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE 6th International Conference on Photonics, ICP 2016",
address = "United States",

}

Ker, PJ, Marshall, ARJ, Tan, CH & David, JPR 2016, Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. in 2016 IEEE 6th International Conference on Photonics, ICP 2016., 7510018, 2016 IEEE 6th International Conference on Photonics, ICP 2016, Institute of Electrical and Electronics Engineers Inc., 6th IEEE International Conference on Photonics, ICP 2016, Kuching, Sarawak, Malaysia, 14/03/16. https://doi.org/10.1109/ICP.2016.7510018

Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. / Ker, Pin Jern; Marshall, Andrew R.J.; Tan, Chee Hing; David, John P.R.

2016 IEEE 6th International Conference on Photonics, ICP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7510018 (2016 IEEE 6th International Conference on Photonics, ICP 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging

AU - Ker, Pin Jern

AU - Marshall, Andrew R.J.

AU - Tan, Chee Hing

AU - David, John P.R.

PY - 2016/7/12

Y1 - 2016/7/12

N2 - The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging.

AB - The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging.

UR - http://www.scopus.com/inward/record.url?scp=84981736080&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981736080&partnerID=8YFLogxK

U2 - 10.1109/ICP.2016.7510018

DO - 10.1109/ICP.2016.7510018

M3 - Conference contribution

T3 - 2016 IEEE 6th International Conference on Photonics, ICP 2016

BT - 2016 IEEE 6th International Conference on Photonics, ICP 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Ker PJ, Marshall ARJ, Tan CH, David JPR. Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. In 2016 IEEE 6th International Conference on Photonics, ICP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7510018. (2016 IEEE 6th International Conference on Photonics, ICP 2016). https://doi.org/10.1109/ICP.2016.7510018