Study of lifetime prediction of N-MOS transistor due to hot carrier effect

Ibrahim Ahmad, Zainudin Kornain, Mohd Faizul Md Idros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This study discusses a technique to define the reliability and predict the lifetime of NMOS transistor through stressing and analyzing process by using Agilent 4070 Series equipment and xHCI software at wafer level. The stressing process uses direct current stressing method while Takeda and Hu models are used in analysis process. The result of the experiment is in the graph form and it depends on the analysis method which is can be referred to both Takeda and Hu models. The minimum lifetime prediction was 860 hours by using Takeda model as compared to 790 hours using Hu model. The different result between Takeda and Hu model was about 8% only and this allowed both Takeda and Hu models to be used in lifetime prediction of NMOS transistor. For the conclusion, by referring to this lifetime prediction graph, any operating voltage of transistor can predict the lifetime.

Original languageEnglish
Title of host publicationCOMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages298-301
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia
Duration: 06 Dec 200608 Dec 2006

Other

Other2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
CountryAustralia
CityPerth
Period06/12/0608/12/06

Fingerprint

Hot carriers
MOSFET devices
Transistors
Electric potential
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Ahmad, I., Kornain, Z., & Idros, M. F. M. (2006). Study of lifetime prediction of N-MOS transistor due to hot carrier effect. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 298-301). [4429941] https://doi.org/10.1109/COMMAD.2006.4429941
Ahmad, Ibrahim ; Kornain, Zainudin ; Idros, Mohd Faizul Md. / Study of lifetime prediction of N-MOS transistor due to hot carrier effect. COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. pp. 298-301
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Ahmad, I, Kornain, Z & Idros, MFM 2006, Study of lifetime prediction of N-MOS transistor due to hot carrier effect. in COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices., 4429941, pp. 298-301, 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006, Perth, Australia, 06/12/06. https://doi.org/10.1109/COMMAD.2006.4429941

Study of lifetime prediction of N-MOS transistor due to hot carrier effect. / Ahmad, Ibrahim; Kornain, Zainudin; Idros, Mohd Faizul Md.

COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 298-301 4429941.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Ahmad I, Kornain Z, Idros MFM. Study of lifetime prediction of N-MOS transistor due to hot carrier effect. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 298-301. 4429941 https://doi.org/10.1109/COMMAD.2006.4429941