Statistical modeling of solar cell using Taguchi method and TCAD tool

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper focuses on optimizing silicon based solar cell fabrication using Taguchi Optimization Method (TOM). Optimization focused on 3 parameters namely doping concentration of boron, creating phosphorus PN-junction and energy used for ion-implantation with 2 noise factors, Diffuse time and diffuse temperature. The aim is to have a shallow junction in order to decrease the recombination process but higher fill factor (FF) for better efficiency. Fabricating are done in computer simulation environment by Silvaco TCAD software that also conducting an electrical testing for measurement. Each factor (product from the parameters through TOM) has 2 levels of best values taken from the previous researches. In this research, L8 orthogonal array consists of 8 set of different combination of experiment has been done. Optimized values are analyzed by finding Signal to Noise Ratio (SNR) of each experiment and applied it on Larger the Better (LTB) for highest FF and Smaller the Better (STB) for shallowest junction depth. Result reveal that boron at concentration of 5.0×10 15 cm-3, phosphorus at concentration of 2.0×10 16 cm-3, and energy at 10 keV gave a result of 0.3 um ∼ 0.5 um for junction depth and stable FF value of 0.8 at any noise factor contributing efficiency of 15% to 16%. As a conclusion, TOM has achieved predicting the best solution for optimizing silicon solar cell fabrication.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages1-5
Number of pages5
DOIs
Publication statusPublished - 01 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

Fingerprint

Taguchi methods
Solar cells
Boron
Phosphorus
Fabrication
Silicon solar cells
Ion implantation
Signal to noise ratio
Experiments
Doping (additives)
Silicon
Computer simulation
Testing
Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Bahrudin, M. S., Abdullah, S. F., & Ahmad, I. (2012). Statistical modeling of solar cell using Taguchi method and TCAD tool. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 1-5). [6417073] (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). https://doi.org/10.1109/SMElec.2012.6417073
Bahrudin, M. S. ; Abdullah, Siti Fazlili ; Ahmad, Ibrahim. / Statistical modeling of solar cell using Taguchi method and TCAD tool. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 1-5 (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings).
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abstract = "This paper focuses on optimizing silicon based solar cell fabrication using Taguchi Optimization Method (TOM). Optimization focused on 3 parameters namely doping concentration of boron, creating phosphorus PN-junction and energy used for ion-implantation with 2 noise factors, Diffuse time and diffuse temperature. The aim is to have a shallow junction in order to decrease the recombination process but higher fill factor (FF) for better efficiency. Fabricating are done in computer simulation environment by Silvaco TCAD software that also conducting an electrical testing for measurement. Each factor (product from the parameters through TOM) has 2 levels of best values taken from the previous researches. In this research, L8 orthogonal array consists of 8 set of different combination of experiment has been done. Optimized values are analyzed by finding Signal to Noise Ratio (SNR) of each experiment and applied it on Larger the Better (LTB) for highest FF and Smaller the Better (STB) for shallowest junction depth. Result reveal that boron at concentration of 5.0×10 15 cm-3, phosphorus at concentration of 2.0×10 16 cm-3, and energy at 10 keV gave a result of 0.3 um ∼ 0.5 um for junction depth and stable FF value of 0.8 at any noise factor contributing efficiency of 15{\%} to 16{\%}. As a conclusion, TOM has achieved predicting the best solution for optimizing silicon solar cell fabrication.",
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Bahrudin, MS, Abdullah, SF & Ahmad, I 2012, Statistical modeling of solar cell using Taguchi method and TCAD tool. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417073, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings, pp. 1-5, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, Malaysia, 19/09/12. https://doi.org/10.1109/SMElec.2012.6417073

Statistical modeling of solar cell using Taguchi method and TCAD tool. / Bahrudin, M. S.; Abdullah, Siti Fazlili; Ahmad, Ibrahim.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 1-5 6417073 (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Bahrudin MS, Abdullah SF, Ahmad I. Statistical modeling of solar cell using Taguchi method and TCAD tool. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 1-5. 6417073. (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). https://doi.org/10.1109/SMElec.2012.6417073