Space-Charge-Limited Dark Injection (SCL DI) transient measurements

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials.

Original languageEnglish
Title of host publicationICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
Pages192-194
Number of pages3
DOIs
Publication statusPublished - 11 Oct 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka, Malaysia
Duration: 28 Jun 201030 Jun 2010

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CountryMalaysia
CityMelaka
Period28/06/1030/06/10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yap, B. K., Koh, J. S. P., Tiong, S. K., & Ong, C. N. (2010). Space-Charge-Limited Dark Injection (SCL DI) transient measurements. In ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics (pp. 192-194). [5549542] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2010.5549542