Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software

M. Najib Harif, Siti Fazlili Abdullah, Ahmad Wafi Mahmood Zuhdi, Fazliyana Za'Abar, Mohd Shaparuddin Bahrudin, Azri Husni Hasani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25°C to 50°C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages201-204
Number of pages4
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 03 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume2018-August

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/08/1817/08/18

Fingerprint

Indium
Gallium
Copper
Solar cells
Open circuit voltage
Current density
Temperature
Short circuit currents
Energy gap
gallium selenide
Degradation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Harif, M. N., Abdullah, S. F., Mahmood Zuhdi, A. W., Za'Abar, F., Bahrudin, M. S., & Hasani, A. H. (2018). Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (pp. 201-204). [8481333] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481333
Harif, M. Najib ; Abdullah, Siti Fazlili ; Mahmood Zuhdi, Ahmad Wafi ; Za'Abar, Fazliyana ; Bahrudin, Mohd Shaparuddin ; Hasani, Azri Husni. / Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 201-204 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
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abstract = "The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25°C to 50°C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87{\%}, 1.61 {\%} and 6.81 {\%} respectively while short current density increase 0.50{\%}. It can also be suggested that there are significant direct correlations between band gap energy and temperature change.",
author = "Harif, {M. Najib} and Abdullah, {Siti Fazlili} and {Mahmood Zuhdi}, {Ahmad Wafi} and Fazliyana Za'Abar and Bahrudin, {Mohd Shaparuddin} and Hasani, {Azri Husni}",
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Harif, MN, Abdullah, SF, Mahmood Zuhdi, AW, Za'Abar, F, Bahrudin, MS & Hasani, AH 2018, Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings., 8481333, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2018-August, Institute of Electrical and Electronics Engineers Inc., pp. 201-204, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/08/18. https://doi.org/10.1109/SMELEC.2018.8481333

Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software. / Harif, M. Najib; Abdullah, Siti Fazlili; Mahmood Zuhdi, Ahmad Wafi; Za'Abar, Fazliyana; Bahrudin, Mohd Shaparuddin; Hasani, Azri Husni.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 201-204 8481333 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25°C to 50°C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change.

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Harif MN, Abdullah SF, Mahmood Zuhdi AW, Za'Abar F, Bahrudin MS, Hasani AH. Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 201-204. 8481333. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2018.8481333