TY - GEN
T1 - Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
AU - Harif, M. Najib
AU - Abdullah, Siti Fazlili
AU - Mahmood Zuhdi, Ahmad Wafi
AU - Za'Abar, Fazliyana
AU - Bahrudin, Mohd Shaparuddin
AU - Hasani, Azri Husni
PY - 2018/10/3
Y1 - 2018/10/3
N2 - The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25°C to 50°C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change.
AB - The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25°C to 50°C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change.
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U2 - 10.1109/SMELEC.2018.8481333
DO - 10.1109/SMELEC.2018.8481333
M3 - Conference contribution
AN - SCOPUS:85056261541
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 201
EP - 204
BT - 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
Y2 - 15 August 2018 through 17 August 2018
ER -