Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Hirofumi Akagi, Tatsuya Yamagishi, Nadia Mei Lin Tan, Shin Ichi Kinouchi, Yuji Miyazaki, Masato Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

This paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into conduction and switching losses produced by the SiC modules, iron and copper losses due to magnetic devices, and an unknown loss. The power-loss breakdown concludes that the summation of the conduction and switching losses is about 60% of the overall power loss, and that the conduction loss is nearly equal to the switching loss at the 20-kHz, 100-kW operation.

Original languageEnglish
Title of host publication2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
PublisherIEEE Computer Society
Pages750-757
Number of pages8
ISBN (Print)9781479927050
DOIs
Publication statusPublished - 2014
Event7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan
Duration: 18 May 201421 May 2014

Other

Other7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
CountryJapan
CityHiroshima
Period18/05/1421/05/14

Fingerprint

DC-DC converters
Magnetic devices
Conversion efficiency
Iron
Copper
Networks (circuits)
Testing

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Akagi, H., Yamagishi, T., Tan, N. M. L., Kinouchi, S. I., Miyazaki, Y., & Koyama, M. (2014). Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 (pp. 750-757). [6869672] IEEE Computer Society. https://doi.org/10.1109/IPEC.2014.6869672
Akagi, Hirofumi ; Yamagishi, Tatsuya ; Tan, Nadia Mei Lin ; Kinouchi, Shin Ichi ; Miyazaki, Yuji ; Koyama, Masato. / Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules. 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. pp. 750-757
@inproceedings{2cabf9760f64407dace2c1e11b01e5c5,
title = "Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules",
abstract = "This paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7{\%} at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into conduction and switching losses produced by the SiC modules, iron and copper losses due to magnetic devices, and an unknown loss. The power-loss breakdown concludes that the summation of the conduction and switching losses is about 60{\%} of the overall power loss, and that the conduction loss is nearly equal to the switching loss at the 20-kHz, 100-kW operation.",
author = "Hirofumi Akagi and Tatsuya Yamagishi and Tan, {Nadia Mei Lin} and Kinouchi, {Shin Ichi} and Yuji Miyazaki and Masato Koyama",
year = "2014",
doi = "10.1109/IPEC.2014.6869672",
language = "English",
isbn = "9781479927050",
pages = "750--757",
booktitle = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",
publisher = "IEEE Computer Society",
address = "United States",

}

Akagi, H, Yamagishi, T, Tan, NML, Kinouchi, SI, Miyazaki, Y & Koyama, M 2014, Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules. in 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014., 6869672, IEEE Computer Society, pp. 750-757, 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 18/05/14. https://doi.org/10.1109/IPEC.2014.6869672

Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules. / Akagi, Hirofumi; Yamagishi, Tatsuya; Tan, Nadia Mei Lin; Kinouchi, Shin Ichi; Miyazaki, Yuji; Koyama, Masato.

2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. p. 750-757 6869672.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

AU - Akagi, Hirofumi

AU - Yamagishi, Tatsuya

AU - Tan, Nadia Mei Lin

AU - Kinouchi, Shin Ichi

AU - Miyazaki, Yuji

AU - Koyama, Masato

PY - 2014

Y1 - 2014

N2 - This paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into conduction and switching losses produced by the SiC modules, iron and copper losses due to magnetic devices, and an unknown loss. The power-loss breakdown concludes that the summation of the conduction and switching losses is about 60% of the overall power loss, and that the conduction loss is nearly equal to the switching loss at the 20-kHz, 100-kW operation.

AB - This paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into conduction and switching losses produced by the SiC modules, iron and copper losses due to magnetic devices, and an unknown loss. The power-loss breakdown concludes that the summation of the conduction and switching losses is about 60% of the overall power loss, and that the conduction loss is nearly equal to the switching loss at the 20-kHz, 100-kW operation.

UR - http://www.scopus.com/inward/record.url?scp=84906673329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906673329&partnerID=8YFLogxK

U2 - 10.1109/IPEC.2014.6869672

DO - 10.1109/IPEC.2014.6869672

M3 - Conference contribution

SN - 9781479927050

SP - 750

EP - 757

BT - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

PB - IEEE Computer Society

ER -

Akagi H, Yamagishi T, Tan NML, Kinouchi SI, Miyazaki Y, Koyama M. Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society. 2014. p. 750-757. 6869672 https://doi.org/10.1109/IPEC.2014.6869672