Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Hirofumi Akagi, Tatsuya Yamagishi, Nadia Mei Lin Tan, Yuji Miyazaki, Shin Ichi Kinouchi, Masato Koyama

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation.

Original languageEnglish
Article number6839038
Pages (from-to)420-428
Number of pages9
JournalIEEE Transactions on Industry Applications
Volume51
Issue number1
DOIs
Publication statusPublished - 01 Jan 2015

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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