Optimization of process parameters for threshold voltage and leakage current based on taguchi method

Z. A. Noor Faizah, Ibrahim Ahmad, Pin Jern Ker, P. S. Menon, A. H. Afifah Maheran, S. K. Mah

Research output: Contribution to journalArticle

Abstract

In this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Technology Computer Aided Design (TCAD) tools. The simulation studies were directed under four varying process parameters, which are Vt adjust implantation dose, the halo tiling angle, the S/D implantation dose and the compensation implantation dose. The L9 Orthogonal Array (OA), the signal-to-noise ratio (SNR), and the analysis of variance (ANOVA) were used to study the performance characteristics and to gain an optimum combination of parameter settings. It was revealed that the Vt adjust implantation dose was the most influential parameter on the Vth and Ileak. Furthermore, it also improves the device performance. The result of Vth complied with the projections made by the International Technology Roadmap for Semiconductors (ITRS).

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalJournal of Telecommunication, Electronic and Computer Engineering
Volume10
Issue number2-7
Publication statusPublished - 01 Jan 2018

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Taguchi methods
Threshold voltage
Leakage currents
Analysis of variance (ANOVA)
Computer aided design
Signal to noise ratio
Semiconductor materials
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

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title = "Optimization of process parameters for threshold voltage and leakage current based on taguchi method",
abstract = "In this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Technology Computer Aided Design (TCAD) tools. The simulation studies were directed under four varying process parameters, which are Vt adjust implantation dose, the halo tiling angle, the S/D implantation dose and the compensation implantation dose. The L9 Orthogonal Array (OA), the signal-to-noise ratio (SNR), and the analysis of variance (ANOVA) were used to study the performance characteristics and to gain an optimum combination of parameter settings. It was revealed that the Vt adjust implantation dose was the most influential parameter on the Vth and Ileak. Furthermore, it also improves the device performance. The result of Vth complied with the projections made by the International Technology Roadmap for Semiconductors (ITRS).",
author = "{Noor Faizah}, {Z. A.} and Ibrahim Ahmad and Ker, {Pin Jern} and Menon, {P. S.} and {Afifah Maheran}, {A. H.} and Mah, {S. K.}",
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Optimization of process parameters for threshold voltage and leakage current based on taguchi method. / Noor Faizah, Z. A.; Ahmad, Ibrahim; Ker, Pin Jern; Menon, P. S.; Afifah Maheran, A. H.; Mah, S. K.

In: Journal of Telecommunication, Electronic and Computer Engineering, Vol. 10, No. 2-7, 01.01.2018, p. 143-146.

Research output: Contribution to journalArticle

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AU - Noor Faizah, Z. A.

AU - Ahmad, Ibrahim

AU - Ker, Pin Jern

AU - Menon, P. S.

AU - Afifah Maheran, A. H.

AU - Mah, S. K.

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