Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells

W. Emilin Rashid, Pin Jern Ker, Md Zaini Jamaludin, N. A. Rahman, Mahdi All Khamis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thermophotovoltaic (TPV) cells that convert thermal heat directly into electricity are attracting attention as they potentially produce high output power densities. Owing to its capability to convert with a Carnot efficiency, an optimization of these cells is essential to further enhance their performance and efficiency. This paper focuses on the optimization of p-type emitter thickness of Gallium Antimonide (GaSb) based TPV cell using Silvaco TCAD simulation software. The simulation works in this paper were validated by having a good agreement with those from the experimental work in terms of the electrical characteristics and efficiency of the GaSb TPV cell. Further simulation was done with different p-type emitter thicknesses ranging from 0.15 μm to 1.20 μm, It was demonstrated that the open circuit voltage (Voc) of the cell increases while the short-circuit current density (Jsc) decreases with increasing p-type emitter thickness. Since the rate of increasing Voc is faster than that of decreasing Jsc, higher maximum power efficiency was obtained at an optimum thickness of 0.85 μm. It was found that, under AM1.5 illumination condition, an increment of power efficiency from 5.91 % to 6.63 % was achieved when increasing p-type emitter thickness from 0.15 μm to 0.85 μm.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages109-112
Number of pages4
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 03 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume2018-August

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/08/1817/08/18

Fingerprint

Gallium
Open circuit voltage
Short circuit currents
Current density
Electricity
Lighting
Hot Temperature
thiazole-4-carboxamide adenine dinucleotide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Rashid, W. E., Ker, P. J., Jamaludin, M. Z., Rahman, N. A., & Khamis, M. A. (2018). Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (pp. 109-112). [8481305] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481305
Rashid, W. Emilin ; Ker, Pin Jern ; Jamaludin, Md Zaini ; Rahman, N. A. ; Khamis, Mahdi All. / Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 109-112 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
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abstract = "Thermophotovoltaic (TPV) cells that convert thermal heat directly into electricity are attracting attention as they potentially produce high output power densities. Owing to its capability to convert with a Carnot efficiency, an optimization of these cells is essential to further enhance their performance and efficiency. This paper focuses on the optimization of p-type emitter thickness of Gallium Antimonide (GaSb) based TPV cell using Silvaco TCAD simulation software. The simulation works in this paper were validated by having a good agreement with those from the experimental work in terms of the electrical characteristics and efficiency of the GaSb TPV cell. Further simulation was done with different p-type emitter thicknesses ranging from 0.15 μm to 1.20 μm, It was demonstrated that the open circuit voltage (Voc) of the cell increases while the short-circuit current density (Jsc) decreases with increasing p-type emitter thickness. Since the rate of increasing Voc is faster than that of decreasing Jsc, higher maximum power efficiency was obtained at an optimum thickness of 0.85 μm. It was found that, under AM1.5 illumination condition, an increment of power efficiency from 5.91 {\%} to 6.63 {\%} was achieved when increasing p-type emitter thickness from 0.15 μm to 0.85 μm.",
author = "Rashid, {W. Emilin} and Ker, {Pin Jern} and Jamaludin, {Md Zaini} and Rahman, {N. A.} and Khamis, {Mahdi All}",
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Rashid, WE, Ker, PJ, Jamaludin, MZ, Rahman, NA & Khamis, MA 2018, Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings., 8481305, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2018-August, Institute of Electrical and Electronics Engineers Inc., pp. 109-112, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/08/18. https://doi.org/10.1109/SMELEC.2018.8481305

Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells. / Rashid, W. Emilin; Ker, Pin Jern; Jamaludin, Md Zaini; Rahman, N. A.; Khamis, Mahdi All.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 109-112 8481305 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Rashid WE, Ker PJ, Jamaludin MZ, Rahman NA, Khamis MA. Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 109-112. 8481305. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2018.8481305