Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell

Fazliyana Za'Abar, Ahmad Wafi Mahmood Zuhdi, Mohd Shaparuddin Bahrudin, Siti Fazlili Abdullah, M. Najib Harif, Azri Husni Hasani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the purpose of designing a highly efficient Cu(In, Ga)Se2 (CIGS) solar cell, an understanding of the structural, optical and electronic properties of each constituent layers in the heterojunction cell is very crucial. Important parameters such as thickness, doping concentration, electron affinity and band gap energy are identified to govern the electrical characterization of the cell. In this paper, an extensive study on the effects of these parameters on the short circuit current density (Jsc) and open circuit voltage (Voc) known as J-V characteristics is performed. Optimized values of each parameter obtained from different numerical simulations are summarized and presented. An optimal CIGS solar cell model is later identified and simulated using Silvaco ATLAS software. Performance analysis is carried out on the completed cell under standard irradiance with air mass 1.5 (AM1.5) spectrums. This proposed model provides simulated conversion efficiency of 23.58% and fill factor (FF) of 77.89% which is in agreement with experimental efficiencies found in literature.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages209-213
Number of pages5
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 03 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume2018-August

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/08/1817/08/18

Fingerprint

Solar cells
Electron affinity
Computer simulation
Open circuit voltage
Electronic properties
Short circuit currents
Conversion efficiency
Heterojunctions
Structural properties
Energy gap
Current density
Optical properties
Doping (additives)
Air

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Za'Abar, F., Mahmood Zuhdi, A. W., Bahrudin, M. S., Abdullah, S. F., Harif, M. N., & Hasani, A. H. (2018). Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (pp. 209-213). [8481289] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481289
Za'Abar, Fazliyana ; Mahmood Zuhdi, Ahmad Wafi ; Bahrudin, Mohd Shaparuddin ; Abdullah, Siti Fazlili ; Harif, M. Najib ; Hasani, Azri Husni. / Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 209-213 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
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abstract = "For the purpose of designing a highly efficient Cu(In, Ga)Se2 (CIGS) solar cell, an understanding of the structural, optical and electronic properties of each constituent layers in the heterojunction cell is very crucial. Important parameters such as thickness, doping concentration, electron affinity and band gap energy are identified to govern the electrical characterization of the cell. In this paper, an extensive study on the effects of these parameters on the short circuit current density (Jsc) and open circuit voltage (Voc) known as J-V characteristics is performed. Optimized values of each parameter obtained from different numerical simulations are summarized and presented. An optimal CIGS solar cell model is later identified and simulated using Silvaco ATLAS software. Performance analysis is carried out on the completed cell under standard irradiance with air mass 1.5 (AM1.5) spectrums. This proposed model provides simulated conversion efficiency of 23.58{\%} and fill factor (FF) of 77.89{\%} which is in agreement with experimental efficiencies found in literature.",
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Za'Abar, F, Mahmood Zuhdi, AW, Bahrudin, MS, Abdullah, SF, Harif, MN & Hasani, AH 2018, Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings., 8481289, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2018-August, Institute of Electrical and Electronics Engineers Inc., pp. 209-213, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/08/18. https://doi.org/10.1109/SMELEC.2018.8481289

Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell. / Za'Abar, Fazliyana; Mahmood Zuhdi, Ahmad Wafi; Bahrudin, Mohd Shaparuddin; Abdullah, Siti Fazlili; Harif, M. Najib; Hasani, Azri Husni.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 209-213 8481289 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Harif, M. Najib

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Za'Abar F, Mahmood Zuhdi AW, Bahrudin MS, Abdullah SF, Harif MN, Hasani AH. Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 209-213. 8481289. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2018.8481289