Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Ameer F. Roslan, K. E. Kaharudin, F. Salehuddin, A. S.M. Zain, Ibrahim Ahmad, Z. A.N. Faizah, H. Hazura, A. R. Hanim, S. K. Idris, A. M. Zaiton, N. R. Mohamad, Afifah Maheran A. Hamid

Research output: Contribution to journalConference article

Abstract

The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 × 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 × 10 5 .

Original languageEnglish
Article number012046
JournalJournal of Physics: Conference Series
Volume1123
Issue number1
DOIs
Publication statusPublished - 30 Nov 2018
Event5th International Conference on Fundamental and Applied Sciences, ICFAS 2018 - Kuala Lumpur, Malaysia
Duration: 13 Aug 201815 Aug 2018

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Roslan, A. F., Kaharudin, K. E., Salehuddin, F., Zain, A. S. M., Ahmad, I., Faizah, Z. A. N., Hazura, H., Hanim, A. R., Idris, S. K., Zaiton, A. M., Mohamad, N. R., & Hamid, A. M. A. (2018). Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method. Journal of Physics: Conference Series, 1123(1), [012046]. https://doi.org/10.1088/1742-6596/1123/1/012046