Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Ameer F. Roslan, K. E. Kaharudin, F. Salehuddin, A. S.M. Zain, Ibrahim Ahmad, Z. A.N. Faizah, H. Hazura, A. R. Hanim, S. K. Idris, A. M. Zaiton, N. R. Mohamad, Afifah Maheran A. Hamid

Research output: Contribution to journalConference article

Abstract

The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 × 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 × 10 5 .

Original languageEnglish
Article number012046
JournalJournal of Physics: Conference Series
Volume1123
Issue number1
DOIs
Publication statusPublished - 30 Nov 2018
Event5th International Conference on Fundamental and Applied Sciences, ICFAS 2018 - Kuala Lumpur, Malaysia
Duration: 13 Aug 201815 Aug 2018

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Taguchi methods
graphene
field effect transistors
halos
optimization
dosage
signal to noise ratios
energy
analysis of variance
energy sources
layouts
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Roslan, A. F., Kaharudin, K. E., Salehuddin, F., Zain, A. S. M., Ahmad, I., Faizah, Z. A. N., ... Hamid, A. M. A. (2018). Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method. Journal of Physics: Conference Series, 1123(1), [012046]. https://doi.org/10.1088/1742-6596/1123/1/012046
Roslan, Ameer F. ; Kaharudin, K. E. ; Salehuddin, F. ; Zain, A. S.M. ; Ahmad, Ibrahim ; Faizah, Z. A.N. ; Hazura, H. ; Hanim, A. R. ; Idris, S. K. ; Zaiton, A. M. ; Mohamad, N. R. ; Hamid, Afifah Maheran A. / Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method. In: Journal of Physics: Conference Series. 2018 ; Vol. 1123, No. 1.
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title = "Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method",
abstract = "The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56{\%} and 37{\%} factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 × 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 × 10 5 .",
author = "Roslan, {Ameer F.} and Kaharudin, {K. E.} and F. Salehuddin and Zain, {A. S.M.} and Ibrahim Ahmad and Faizah, {Z. A.N.} and H. Hazura and Hanim, {A. R.} and Idris, {S. K.} and Zaiton, {A. M.} and Mohamad, {N. R.} and Hamid, {Afifah Maheran A.}",
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Roslan, AF, Kaharudin, KE, Salehuddin, F, Zain, ASM, Ahmad, I, Faizah, ZAN, Hazura, H, Hanim, AR, Idris, SK, Zaiton, AM, Mohamad, NR & Hamid, AMA 2018, 'Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method', Journal of Physics: Conference Series, vol. 1123, no. 1, 012046. https://doi.org/10.1088/1742-6596/1123/1/012046

Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method. / Roslan, Ameer F.; Kaharudin, K. E.; Salehuddin, F.; Zain, A. S.M.; Ahmad, Ibrahim; Faizah, Z. A.N.; Hazura, H.; Hanim, A. R.; Idris, S. K.; Zaiton, A. M.; Mohamad, N. R.; Hamid, Afifah Maheran A.

In: Journal of Physics: Conference Series, Vol. 1123, No. 1, 012046, 30.11.2018.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

AU - Roslan, Ameer F.

AU - Kaharudin, K. E.

AU - Salehuddin, F.

AU - Zain, A. S.M.

AU - Ahmad, Ibrahim

AU - Faizah, Z. A.N.

AU - Hazura, H.

AU - Hanim, A. R.

AU - Idris, S. K.

AU - Zaiton, A. M.

AU - Mohamad, N. R.

AU - Hamid, Afifah Maheran A.

PY - 2018/11/30

Y1 - 2018/11/30

N2 - The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 × 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 × 10 5 .

AB - The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 × 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 × 10 5 .

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U2 - 10.1088/1742-6596/1123/1/012046

DO - 10.1088/1742-6596/1123/1/012046

M3 - Conference article

VL - 1123

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012046

ER -