Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes

Gregory Thien Soon How, Noor Azrina Talik, Boon Kar Yap, Hideki Nakajima, Sarayut Tunmee, Boon Tong Goh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The utilization of defects in organic-inorganic hybrid perovskite materials such as CH 3 NH 3 PbI 3 is beneficial for memory applications. In this work, a simple CH 3 NH 3 PbI 3 memory device with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au) yielded different switching behaviours. Using Al in ITO/CH 3 NH 3 PbI 3 /Al device reveals Resistive Random Access Memory (ReRAM) behaviour with a SET voltage of 4.5 V and can be RESET by applying a negative sweep voltage above 1.3 V due to the formation of iodide vacancy filament. Interestingly, by using Ag and Au cathodes to replace Al, yielded Write-Once-Read-Many (WORM) resistive switching characteristics. The conversion process from OFF to ON occur at around 4.7 V and 4.0 V for Ag and Au, respectively. The “shorting effect” remains even though a reverse voltage was applied indicating data retention. These fabricated devices could contribute to further understanding of selecting the right electrodes and open up new possibility of studies in the direction of resistive switching memory applications.

Original languageEnglish
Pages (from-to)194-202
Number of pages9
JournalApplied Surface Science
Volume473
DOIs
Publication statusPublished - 15 Apr 2019

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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