Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer

Koh Wen Shi, K. Y. Yow, Calvin Lo, Yap Boon Kar, Halina Misran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the development work of enabling a multi beam laser grooving technology for 40nm node low-k/ULK semiconductor device. A Nd:YAG ultraviolet (UV) laser diode operating at a wavelength of 355 nm was used in the study. The effects of multi beam laser micromachining parameters, i.e. laser power, laser frequency, feed speed, and defocus amount were investigated. The laser processed die samples were thoroughly inspected and characterized, which included the die edge and die sidewall grooving quality, the grooving shape/profile and the laser grooving depth examination. Die strength is important and critical. Die damage from thermal and ablation caused by the laser around the die peripheral weakens the mechanical strength within the die, causing a reduction in die strength. The strength of a laser grooved die was improved by optimizing the laser process parameter. High power optical microscopy, scanning electron microscopy (SEM), and focused ion beam (FIB) are the inspection tools/methods used in this study. Package reliability and stressing were carried out to confirm the robustness of the multi beam laser grooving process parameter and condition in a mass production environment. The dicing defects caused by the laser were validated by using failure analysis. The advantages and limitations of conventional single beam compared to multi beam laser grooving process were also discussed. It is shown that, multi beam laser grooving is possibly one of the best solutions to choose for dicing quality and throughput improvements for low-k/ULK wafer dicing. The multi beam laser process is a feasible, efficient, and cost effective process compared to the conventional single beam laser ablation process.

Original languageEnglish
Title of host publication2014 IEEE 36th International Electronics Manufacturing Technology Conference, IEMT 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982097
DOIs
Publication statusPublished - 12 Jun 2015
Event2014 36th IEEE International Electronics Manufacturing Technology Conference, IEMT 2014 - Johor, Malaysia
Duration: 11 Nov 201413 Nov 2014

Publication series

NameProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
Volume2015-June
ISSN (Print)1089-8190

Other

Other2014 36th IEEE International Electronics Manufacturing Technology Conference, IEMT 2014
CountryMalaysia
CityJohor
Period11/11/1413/11/14

Fingerprint

Laser beams
Lasers
Ultraviolet lasers
Focused ion beams
Micromachining
Laser ablation
Semiconductor devices
Ablation
Failure analysis
Optical microscopy
Strength of materials
Semiconductor lasers
Inspection
Throughput
Wavelength
Defects
Scanning electron microscopy
Costs

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Shi, K. W., Yow, K. Y., Lo, C., Kar, Y. B., & Misran, H. (2015). Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer. In 2014 IEEE 36th International Electronics Manufacturing Technology Conference, IEMT 2014 [7123083] (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEMT.2014.7123083
Shi, Koh Wen ; Yow, K. Y. ; Lo, Calvin ; Kar, Yap Boon ; Misran, Halina. / Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer. 2014 IEEE 36th International Electronics Manufacturing Technology Conference, IEMT 2014. Institute of Electrical and Electronics Engineers Inc., 2015. (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium).
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Shi, KW, Yow, KY, Lo, C, Kar, YB & Misran, H 2015, Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer. in 2014 IEEE 36th International Electronics Manufacturing Technology Conference, IEMT 2014., 7123083, Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., 2014 36th IEEE International Electronics Manufacturing Technology Conference, IEMT 2014, Johor, Malaysia, 11/11/14. https://doi.org/10.1109/IEMT.2014.7123083

Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer. / Shi, Koh Wen; Yow, K. Y.; Lo, Calvin; Kar, Yap Boon; Misran, Halina.

2014 IEEE 36th International Electronics Manufacturing Technology Conference, IEMT 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7123083 (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium; Vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Shi KW, Yow KY, Lo C, Kar YB, Misran H. Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer. In 2014 IEEE 36th International Electronics Manufacturing Technology Conference, IEMT 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7123083. (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium). https://doi.org/10.1109/IEMT.2014.7123083