Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

P. S.Akma Roslan, Pin Jern Ker, Ibrahim Ahmad, Pasupuleti Jagadeesh, P. Z. Fam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages188-191
Number of pages4
ISBN (Electronic)9781509023837
DOIs
Publication statusPublished - 21 Sep 2016
Event12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Bangsar, Kuala Lumpur, Malaysia
Duration: 17 Aug 201619 Aug 2016

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume2016-September

Other

Other12th IEEE International Conference on Semiconductor Electronics, ICSE 2016
CountryMalaysia
CityBangsar, Kuala Lumpur
Period17/08/1619/08/16

Fingerprint

Dark currents
Photodiodes
Electric fields
Vapor phase epitaxy
Molecular beam epitaxy
Current density
Metals
Electric potential
indium arsenide
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Roslan, P. S. A., Ker, P. J., Ahmad, I., Jagadeesh, P., & Fam, P. Z. (2016). Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings (pp. 188-191). [7573623] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2016.7573623
Roslan, P. S.Akma ; Ker, Pin Jern ; Ahmad, Ibrahim ; Jagadeesh, Pasupuleti ; Fam, P. Z. / Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics. 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 188-191 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
@inproceedings{d407692e498c4bc9922a0437dd575c5d,
title = "Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics",
abstract = "This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results.",
author = "Roslan, {P. S.Akma} and Ker, {Pin Jern} and Ibrahim Ahmad and Pasupuleti Jagadeesh and Fam, {P. Z.}",
year = "2016",
month = "9",
day = "21",
doi = "10.1109/SMELEC.2016.7573623",
language = "English",
series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "188--191",
booktitle = "2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings",
address = "United States",

}

Roslan, PSA, Ker, PJ, Ahmad, I, Jagadeesh, P & Fam, PZ 2016, Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics. in 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings., 7573623, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 188-191, 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, Bangsar, Kuala Lumpur, Malaysia, 17/08/16. https://doi.org/10.1109/SMELEC.2016.7573623

Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics. / Roslan, P. S.Akma; Ker, Pin Jern; Ahmad, Ibrahim; Jagadeesh, Pasupuleti; Fam, P. Z.

2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 188-191 7573623 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

AU - Roslan, P. S.Akma

AU - Ker, Pin Jern

AU - Ahmad, Ibrahim

AU - Jagadeesh, Pasupuleti

AU - Fam, P. Z.

PY - 2016/9/21

Y1 - 2016/9/21

N2 - This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results.

AB - This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results.

UR - http://www.scopus.com/inward/record.url?scp=84990891489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84990891489&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2016.7573623

DO - 10.1109/SMELEC.2016.7573623

M3 - Conference contribution

AN - SCOPUS:84990891489

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 188

EP - 191

BT - 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Roslan PSA, Ker PJ, Ahmad I, Jagadeesh P, Fam PZ. Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 188-191. 7573623. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2016.7573623