Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire

Wong Boh Kid, Eu Poh Leng, Lee Boon Seong, Chew Weily, Boon Kar Yap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 3131mm large body size is selected to study. Aluminum wire type, bonding capillary, and wire bonding parameters, were selected as critical factors in this study. Both were used for bonding parameters optimization. Critical responses such as ball size, ball height/bonded ball diameter ratio, wire pull strength, ball shear strength, and wire peel strength were studied to understand the wire bonding effect of C45 ultra low k and 40m pad pitch. Analysis between copper and gold wire were performed for comparison purpose at different thermal aging read point. The thermal aging read point were studied at 175°C for 168, 504 and 1008 hours while at temperature of 225°C for 4.5, 13.5, 26, 52 and 97 hours respectively. This is used to study the IMC thickness of Cu-Al. To investigate the effects of IMC formation on the copper wire on Al pad, wire pull, wire peel and ball shear test has to be construct.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages236-240
Number of pages5
DOIs
Publication statusPublished - 22 Dec 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia
Duration: 28 Sep 201130 Sep 2011

Publication series

Name2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CountryMalaysia
CityKota Kinabalu, Sabah
Period28/09/1130/09/11

Fingerprint

Wire
Copper
Thermal aging
Gold
Shear strength
Semiconductor materials
Aluminum

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kid, W. B., Leng, E. P., Seong, L. B., Weily, C., & Yap, B. K. (2011). Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 236-240). [6088332] (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts). https://doi.org/10.1109/RSM.2011.6088332
Kid, Wong Boh ; Leng, Eu Poh ; Seong, Lee Boon ; Weily, Chew ; Yap, Boon Kar. / Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire. 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. pp. 236-240 (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts).
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abstract = "Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 3131mm large body size is selected to study. Aluminum wire type, bonding capillary, and wire bonding parameters, were selected as critical factors in this study. Both were used for bonding parameters optimization. Critical responses such as ball size, ball height/bonded ball diameter ratio, wire pull strength, ball shear strength, and wire peel strength were studied to understand the wire bonding effect of C45 ultra low k and 40m pad pitch. Analysis between copper and gold wire were performed for comparison purpose at different thermal aging read point. The thermal aging read point were studied at 175°C for 168, 504 and 1008 hours while at temperature of 225°C for 4.5, 13.5, 26, 52 and 97 hours respectively. This is used to study the IMC thickness of Cu-Al. To investigate the effects of IMC formation on the copper wire on Al pad, wire pull, wire peel and ball shear test has to be construct.",
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Kid, WB, Leng, EP, Seong, LB, Weily, C & Yap, BK 2011, Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088332, 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts, pp. 236-240, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, Malaysia, 28/09/11. https://doi.org/10.1109/RSM.2011.6088332

Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire. / Kid, Wong Boh; Leng, Eu Poh; Seong, Lee Boon; Weily, Chew; Yap, Boon Kar.

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 236-240 6088332 (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 3131mm large body size is selected to study. Aluminum wire type, bonding capillary, and wire bonding parameters, were selected as critical factors in this study. Both were used for bonding parameters optimization. Critical responses such as ball size, ball height/bonded ball diameter ratio, wire pull strength, ball shear strength, and wire peel strength were studied to understand the wire bonding effect of C45 ultra low k and 40m pad pitch. Analysis between copper and gold wire were performed for comparison purpose at different thermal aging read point. The thermal aging read point were studied at 175°C for 168, 504 and 1008 hours while at temperature of 225°C for 4.5, 13.5, 26, 52 and 97 hours respectively. This is used to study the IMC thickness of Cu-Al. To investigate the effects of IMC formation on the copper wire on Al pad, wire pull, wire peel and ball shear test has to be construct.

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Kid WB, Leng EP, Seong LB, Weily C, Yap BK. Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 236-240. 6088332. (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts). https://doi.org/10.1109/RSM.2011.6088332