Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

Pin Jern Ker, Andrew R.J. Marshall, John P.R. David, Chee Hing Tan

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Dark current measurements on SU-8 passivated InAs avalanche photodiodes (APDs) were carried out at temperatures ranging from 77 to 290 K. Extraction of the bulk and surface components suggested that the InAs APDs exhibit diffusion dominated bulk current and generation-recombination surface current. The activation energies obtained were 0.36 eV and 0.18 eV for bulk and surface components respectively. The responsivities of the InAs APDs were measured for wavelengths between 1.3 to 2 μm and the quantum efficiency was calculated to be ~50% across the measured wavelengths. The detectivity of the InAs diode was calculated based on the measured dark current density and responsivity. It was shown that the InAs APD has comparable detectivity with a commercial Judson InAs photodiode at temperatures of 200 to 290 K but has approximately 10 times higher detectivity than a commercial Hamamatsu InAs photodiode at 77 K. The potential of InAs APDs for infrared sensing is shown yielding high responsivity values and low dark current densities at 77 K. An avalanche multiplication factor of 22 with minimal excess noise factor at a dark current density of ~10 -4 A/cm 2, equivalent to a gain normalized dark current of ~5 x 10 -6 A/cm 2 is obtained.

Original languageEnglish
Pages (from-to)310-313
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number2
DOIs
Publication statusPublished - 01 Feb 2012

Fingerprint

electron avalanche
low noise
photodiodes
avalanches
dark current
current density
multiplication
wavelengths
quantum efficiency
diodes
activation energy
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

@article{79a4062be984405fa51bc17f22979626,
title = "Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing",
abstract = "Dark current measurements on SU-8 passivated InAs avalanche photodiodes (APDs) were carried out at temperatures ranging from 77 to 290 K. Extraction of the bulk and surface components suggested that the InAs APDs exhibit diffusion dominated bulk current and generation-recombination surface current. The activation energies obtained were 0.36 eV and 0.18 eV for bulk and surface components respectively. The responsivities of the InAs APDs were measured for wavelengths between 1.3 to 2 μm and the quantum efficiency was calculated to be ~50{\%} across the measured wavelengths. The detectivity of the InAs diode was calculated based on the measured dark current density and responsivity. It was shown that the InAs APD has comparable detectivity with a commercial Judson InAs photodiode at temperatures of 200 to 290 K but has approximately 10 times higher detectivity than a commercial Hamamatsu InAs photodiode at 77 K. The potential of InAs APDs for infrared sensing is shown yielding high responsivity values and low dark current densities at 77 K. An avalanche multiplication factor of 22 with minimal excess noise factor at a dark current density of ~10 -4 A/cm 2, equivalent to a gain normalized dark current of ~5 x 10 -6 A/cm 2 is obtained.",
author = "Ker, {Pin Jern} and Marshall, {Andrew R.J.} and David, {John P.R.} and Tan, {Chee Hing}",
year = "2012",
month = "2",
day = "1",
doi = "10.1002/pssc.201100277",
language = "English",
volume = "9",
pages = "310--313",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "2",

}

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. / Ker, Pin Jern; Marshall, Andrew R.J.; David, John P.R.; Tan, Chee Hing.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 2, 01.02.2012, p. 310-313.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

AU - Ker, Pin Jern

AU - Marshall, Andrew R.J.

AU - David, John P.R.

AU - Tan, Chee Hing

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Dark current measurements on SU-8 passivated InAs avalanche photodiodes (APDs) were carried out at temperatures ranging from 77 to 290 K. Extraction of the bulk and surface components suggested that the InAs APDs exhibit diffusion dominated bulk current and generation-recombination surface current. The activation energies obtained were 0.36 eV and 0.18 eV for bulk and surface components respectively. The responsivities of the InAs APDs were measured for wavelengths between 1.3 to 2 μm and the quantum efficiency was calculated to be ~50% across the measured wavelengths. The detectivity of the InAs diode was calculated based on the measured dark current density and responsivity. It was shown that the InAs APD has comparable detectivity with a commercial Judson InAs photodiode at temperatures of 200 to 290 K but has approximately 10 times higher detectivity than a commercial Hamamatsu InAs photodiode at 77 K. The potential of InAs APDs for infrared sensing is shown yielding high responsivity values and low dark current densities at 77 K. An avalanche multiplication factor of 22 with minimal excess noise factor at a dark current density of ~10 -4 A/cm 2, equivalent to a gain normalized dark current of ~5 x 10 -6 A/cm 2 is obtained.

AB - Dark current measurements on SU-8 passivated InAs avalanche photodiodes (APDs) were carried out at temperatures ranging from 77 to 290 K. Extraction of the bulk and surface components suggested that the InAs APDs exhibit diffusion dominated bulk current and generation-recombination surface current. The activation energies obtained were 0.36 eV and 0.18 eV for bulk and surface components respectively. The responsivities of the InAs APDs were measured for wavelengths between 1.3 to 2 μm and the quantum efficiency was calculated to be ~50% across the measured wavelengths. The detectivity of the InAs diode was calculated based on the measured dark current density and responsivity. It was shown that the InAs APD has comparable detectivity with a commercial Judson InAs photodiode at temperatures of 200 to 290 K but has approximately 10 times higher detectivity than a commercial Hamamatsu InAs photodiode at 77 K. The potential of InAs APDs for infrared sensing is shown yielding high responsivity values and low dark current densities at 77 K. An avalanche multiplication factor of 22 with minimal excess noise factor at a dark current density of ~10 -4 A/cm 2, equivalent to a gain normalized dark current of ~5 x 10 -6 A/cm 2 is obtained.

UR - http://www.scopus.com/inward/record.url?scp=84856144010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856144010&partnerID=8YFLogxK

U2 - 10.1002/pssc.201100277

DO - 10.1002/pssc.201100277

M3 - Article

VL - 9

SP - 310

EP - 313

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 2

ER -