J sc and V oc optimization of perovskite solar cell with interface defect layer using taguchi method

Mohd Shaparuddin Bahrudin, Siti Fazlili Abdullah, Ibrahim Ahmad, Ahmad Wafi Mahmood Zuhdi, Azri Husni Hasani, Fazliyana Za'Abar, Mazin Malik, M. Najib Harif

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper is a study on Perovskite Solar Cell to optimize open circuit voltage, V oc and short circuit current density, J sc for maximum efficiency at variation depth of interface defect layer (IDL). The Perovskite Solar Cell structure is simulated with combinations of IDL at 6nm, 8nm and 10nm of thickness sandwiches on both side of the solar cell absorber layer. Taguchi Method using L9 Orthogonal Array with Larger-The-Better (LTB) was used on finding most effective value on three material parameters: Cadmium Sulfide (CdS) as an electron transport layer (ETL), Perovskite absorber layer (CH 3 NH 3 Pbl 3 ) and Copper Telluride (CuTe) as hole transport layer (HTL) in order to achieved best Voc and J sc values. The works was done by simulating a numerical model using Analysis Of Microelectronic and Photonic Structures (AMPS-ID) software. Using ANOVA, it was discovered the Perovskite absorber layer thickness is vital in affecting the increasing and decreasing on both V oc and J sc . Taguchi predicted a 200nm of thickness for best J sc but predicted 300nm for best V oc . The thickness of 200nm is selected for cost effectiveness. Taguchi method also predicted CdS and CuTe are considered slightly significant on improving the efficiency. Post Taguchi optimization approach shows Perovskite Solar Cell with CH 3 NH 3 Pbl 3 absorber layer has average power conversion efficiency of 20.7% on any combination of mentioned IDL thickness. With the aid of Taguchi method, a stable Perovskite Solar Cell efficiency with variation IDL thickness is achieved.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages192-196
Number of pages5
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 03 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume2018-August

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/08/1817/08/18

Fingerprint

Taguchi methods
Cadmium sulfide
Defects
Perovskite
Open circuit voltage
Cost effectiveness
Analysis of variance (ANOVA)
Microelectronics
Short circuit currents
Photonics
Conversion efficiency
Copper
Numerical models
Solar cells
Current density
Perovskite solar cells
perovskite
cadmium sulfide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bahrudin, M. S., Abdullah, S. F., Ahmad, I., Mahmood Zuhdi, A. W., Hasani, A. H., Za'Abar, F., ... Harif, M. N. (2018). J sc and V oc optimization of perovskite solar cell with interface defect layer using taguchi method In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (pp. 192-196). [8481203] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481203
Bahrudin, Mohd Shaparuddin ; Abdullah, Siti Fazlili ; Ahmad, Ibrahim ; Mahmood Zuhdi, Ahmad Wafi ; Hasani, Azri Husni ; Za'Abar, Fazliyana ; Malik, Mazin ; Harif, M. Najib. / J sc and V oc optimization of perovskite solar cell with interface defect layer using taguchi method 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 192-196 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
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abstract = "This paper is a study on Perovskite Solar Cell to optimize open circuit voltage, V oc and short circuit current density, J sc for maximum efficiency at variation depth of interface defect layer (IDL). The Perovskite Solar Cell structure is simulated with combinations of IDL at 6nm, 8nm and 10nm of thickness sandwiches on both side of the solar cell absorber layer. Taguchi Method using L9 Orthogonal Array with Larger-The-Better (LTB) was used on finding most effective value on three material parameters: Cadmium Sulfide (CdS) as an electron transport layer (ETL), Perovskite absorber layer (CH 3 NH 3 Pbl 3 ) and Copper Telluride (CuTe) as hole transport layer (HTL) in order to achieved best Voc and J sc values. The works was done by simulating a numerical model using Analysis Of Microelectronic and Photonic Structures (AMPS-ID) software. Using ANOVA, it was discovered the Perovskite absorber layer thickness is vital in affecting the increasing and decreasing on both V oc and J sc . Taguchi predicted a 200nm of thickness for best J sc but predicted 300nm for best V oc . The thickness of 200nm is selected for cost effectiveness. Taguchi method also predicted CdS and CuTe are considered slightly significant on improving the efficiency. Post Taguchi optimization approach shows Perovskite Solar Cell with CH 3 NH 3 Pbl 3 absorber layer has average power conversion efficiency of 20.7{\%} on any combination of mentioned IDL thickness. With the aid of Taguchi method, a stable Perovskite Solar Cell efficiency with variation IDL thickness is achieved.",
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Bahrudin, MS, Abdullah, SF, Ahmad, I, Mahmood Zuhdi, AW, Hasani, AH, Za'Abar, F, Malik, M & Harif, MN 2018, J sc and V oc optimization of perovskite solar cell with interface defect layer using taguchi method in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings., 8481203, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2018-August, Institute of Electrical and Electronics Engineers Inc., pp. 192-196, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/08/18. https://doi.org/10.1109/SMELEC.2018.8481203

J sc and V oc optimization of perovskite solar cell with interface defect layer using taguchi method . / Bahrudin, Mohd Shaparuddin; Abdullah, Siti Fazlili; Ahmad, Ibrahim; Mahmood Zuhdi, Ahmad Wafi; Hasani, Azri Husni; Za'Abar, Fazliyana; Malik, Mazin; Harif, M. Najib.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 192-196 8481203 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Bahrudin, Mohd Shaparuddin

AU - Abdullah, Siti Fazlili

AU - Ahmad, Ibrahim

AU - Mahmood Zuhdi, Ahmad Wafi

AU - Hasani, Azri Husni

AU - Za'Abar, Fazliyana

AU - Malik, Mazin

AU - Harif, M. Najib

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N2 - This paper is a study on Perovskite Solar Cell to optimize open circuit voltage, V oc and short circuit current density, J sc for maximum efficiency at variation depth of interface defect layer (IDL). The Perovskite Solar Cell structure is simulated with combinations of IDL at 6nm, 8nm and 10nm of thickness sandwiches on both side of the solar cell absorber layer. Taguchi Method using L9 Orthogonal Array with Larger-The-Better (LTB) was used on finding most effective value on three material parameters: Cadmium Sulfide (CdS) as an electron transport layer (ETL), Perovskite absorber layer (CH 3 NH 3 Pbl 3 ) and Copper Telluride (CuTe) as hole transport layer (HTL) in order to achieved best Voc and J sc values. The works was done by simulating a numerical model using Analysis Of Microelectronic and Photonic Structures (AMPS-ID) software. Using ANOVA, it was discovered the Perovskite absorber layer thickness is vital in affecting the increasing and decreasing on both V oc and J sc . Taguchi predicted a 200nm of thickness for best J sc but predicted 300nm for best V oc . The thickness of 200nm is selected for cost effectiveness. Taguchi method also predicted CdS and CuTe are considered slightly significant on improving the efficiency. Post Taguchi optimization approach shows Perovskite Solar Cell with CH 3 NH 3 Pbl 3 absorber layer has average power conversion efficiency of 20.7% on any combination of mentioned IDL thickness. With the aid of Taguchi method, a stable Perovskite Solar Cell efficiency with variation IDL thickness is achieved.

AB - This paper is a study on Perovskite Solar Cell to optimize open circuit voltage, V oc and short circuit current density, J sc for maximum efficiency at variation depth of interface defect layer (IDL). The Perovskite Solar Cell structure is simulated with combinations of IDL at 6nm, 8nm and 10nm of thickness sandwiches on both side of the solar cell absorber layer. Taguchi Method using L9 Orthogonal Array with Larger-The-Better (LTB) was used on finding most effective value on three material parameters: Cadmium Sulfide (CdS) as an electron transport layer (ETL), Perovskite absorber layer (CH 3 NH 3 Pbl 3 ) and Copper Telluride (CuTe) as hole transport layer (HTL) in order to achieved best Voc and J sc values. The works was done by simulating a numerical model using Analysis Of Microelectronic and Photonic Structures (AMPS-ID) software. Using ANOVA, it was discovered the Perovskite absorber layer thickness is vital in affecting the increasing and decreasing on both V oc and J sc . Taguchi predicted a 200nm of thickness for best J sc but predicted 300nm for best V oc . The thickness of 200nm is selected for cost effectiveness. Taguchi method also predicted CdS and CuTe are considered slightly significant on improving the efficiency. Post Taguchi optimization approach shows Perovskite Solar Cell with CH 3 NH 3 Pbl 3 absorber layer has average power conversion efficiency of 20.7% on any combination of mentioned IDL thickness. With the aid of Taguchi method, a stable Perovskite Solar Cell efficiency with variation IDL thickness is achieved.

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Bahrudin MS, Abdullah SF, Ahmad I, Mahmood Zuhdi AW, Hasani AH, Za'Abar F et al. J sc and V oc optimization of perovskite solar cell with interface defect layer using taguchi method In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 192-196. 8481203. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2018.8481203