Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO 2 thin film on a Si substrate

Kian Heng Goh, Hui Jing Lee, Sze Kuan Lau, Pei Chiew Teh, S. Ramesh, Chou Yong Tan, Yew Hoong Wong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 °C) on ZrO 2 thin film on a Si substrate. The ZrO 2 thin film was prepared via sputtering and anodization processes on a Si substrate. The existence of Si, SiO 2 , m-ZrO 2 , t-ZrO 2 and ZrSiO 4 was confirmed by x-ray diffraction, Fourier transform infrared microscopy and Raman spectroscopy. In addition, NaOH was observed as a residue on the surface of the thin film. The grain size and microstrain of both m-ZrO 2 , and t-ZrO 2 were calculated using the Williamson-Hall and/or Scherrer equation. The morphology of samples was examined by scanning electron microscopy. In contrast to unannealed samples, the annealed samples have a smaller grain size, less NaOH, and SiO 2 with a smoother surface. However, the SiO 2 existed when being annealed at higher temperatures (≥800 °C).

Original languageEnglish
Article number086414
JournalMaterials Research Express
Volume4
Issue number8
DOIs
Publication statusPublished - 01 Aug 2017

Fingerprint

Physical properties
Annealing
Thin films
Substrates
Temperature
Sputtering
Raman spectroscopy
Fourier transforms
Microscopic examination
Diffraction
Infrared radiation
X rays
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Goh, Kian Heng ; Lee, Hui Jing ; Lau, Sze Kuan ; Teh, Pei Chiew ; Ramesh, S. ; Tan, Chou Yong ; Wong, Yew Hoong. / Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO 2 thin film on a Si substrate In: Materials Research Express. 2017 ; Vol. 4, No. 8.
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Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO 2 thin film on a Si substrate . / Goh, Kian Heng; Lee, Hui Jing; Lau, Sze Kuan; Teh, Pei Chiew; Ramesh, S.; Tan, Chou Yong; Wong, Yew Hoong.

In: Materials Research Express, Vol. 4, No. 8, 086414, 01.08.2017.

Research output: Contribution to journalArticle

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AU - Goh, Kian Heng

AU - Lee, Hui Jing

AU - Lau, Sze Kuan

AU - Teh, Pei Chiew

AU - Ramesh, S.

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AU - Wong, Yew Hoong

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N2 - This research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 °C) on ZrO 2 thin film on a Si substrate. The ZrO 2 thin film was prepared via sputtering and anodization processes on a Si substrate. The existence of Si, SiO 2 , m-ZrO 2 , t-ZrO 2 and ZrSiO 4 was confirmed by x-ray diffraction, Fourier transform infrared microscopy and Raman spectroscopy. In addition, NaOH was observed as a residue on the surface of the thin film. The grain size and microstrain of both m-ZrO 2 , and t-ZrO 2 were calculated using the Williamson-Hall and/or Scherrer equation. The morphology of samples was examined by scanning electron microscopy. In contrast to unannealed samples, the annealed samples have a smaller grain size, less NaOH, and SiO 2 with a smoother surface. However, the SiO 2 existed when being annealed at higher temperatures (≥800 °C).

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