Insulated-gate bipolar transistor controlled reactor

Abdulkareem Mokif Obais, Pasupuleti Jagadeesh

Research output: Contribution to journalArticle

Abstract

In this paper a controlled reactor using insulated-gate bipolar transistor (IGBT) is presented. Controlled reactors are usually implemented by using thyristors since the mid-1970's and they are usually referred to as thyristor-controlled reactors. A thyristor-controlled reactor (TCR) is simply two anti-parallel thyristors connected in series with a fixed inductor or reactor. In TCR, it is only required to specify the instants at which its thyristors must start conduction. Once a thyristor conducts, its current keeps on flowing as long as its magnitude is above holding limit and hence no trigger is required after starting of conduction. In addition, a thyristor will be naturally commutated as soon as its current decays below holding limit. For IGBT, the instant at which the device must start conduction and the conduction period must be both identified because maintaining conduction requires keeping on activating the device gate as long its current is still greater than zero. The problem is how long should the IGBT conduct and when it will be turned off? In this paper a reliable control strategy is adopted for presenting the IGBT as a good replacement of thyristor in controlled reactors. A demonstrating system is designed and implemented on the computer program PSpice.

Original languageEnglish
Pages (from-to)2967-2972
Number of pages6
JournalInternational Review on Modelling and Simulations
Volume4
Issue number6
Publication statusPublished - 01 Jan 2011

Fingerprint

Insulated gate bipolar transistors (IGBT)
Thyristors
Reactor
Conduction
Instant
Reliable Control
Antiparallel
Trigger
Replacement
Control Strategy
Decay
Computer program listings
Series
Zero

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Chemical Engineering(all)
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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Insulated-gate bipolar transistor controlled reactor. / Obais, Abdulkareem Mokif; Jagadeesh, Pasupuleti.

In: International Review on Modelling and Simulations, Vol. 4, No. 6, 01.01.2011, p. 2967-2972.

Research output: Contribution to journalArticle

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