Insulated Cu wire free air ball characterization

Hungyang Leong, Boonkar Yap, Navas Khan, Mohd Rusli Ibrahim, L. C. Tan

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Insulated Cu wire technology has immense potential for fine pitch wire bonding interconnection. Understanding the behavior of the insulated Cu free air ball (FAB) formation is crucial for wire bonding process. The FAB formation, size, shape and cleanliness under different conditions for 20 μm insulated Cu wire were investigated using SEM, FESEM and FTIR surface analysis. The results were compared with that of bare Cu wire. Consistently spherical residue free FAB of insulated Cu wire were formed using forming gas. The samples with insulated Cu wire consistently produced larger FAB than that of bare Cu wire, indicating that the energy required for free air ball formation is lower. Basic bonding performances in terms of ball bond strength, intermetallic (IMC) coverage growth and stitch bond strength of insulated Cu wire at time zero are also discussed in the paper.

Original languageEnglish
Pages (from-to)1567-1574
Number of pages8
JournalMicroelectronics Reliability
Volume54
Issue number8
DOIs
Publication statusPublished - Aug 2014

Fingerprint

balls
wire
Wire
air
Air
Bond strength (materials)
cleanliness
Surface analysis
Intermetallics
intermetallics
Gases
Scanning electron microscopy
scanning electron microscopy
gases

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Leong, Hungyang ; Yap, Boonkar ; Khan, Navas ; Ibrahim, Mohd Rusli ; Tan, L. C. / Insulated Cu wire free air ball characterization. In: Microelectronics Reliability. 2014 ; Vol. 54, No. 8. pp. 1567-1574.
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Insulated Cu wire free air ball characterization. / Leong, Hungyang; Yap, Boonkar; Khan, Navas; Ibrahim, Mohd Rusli; Tan, L. C.

In: Microelectronics Reliability, Vol. 54, No. 8, 08.2014, p. 1567-1574.

Research output: Contribution to journalArticle

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