Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology

Uda Hashim, Abu Hassan Shaari, Ibrahim Ahmad, Sahbudin Shaari, Burhanudin Yeop Majlis

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 23 factorial design was used to evaluate three process variables in eight combination runs. The factors were implementation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance used to analyze the data shows that all main variables are important for arsenic implanted wafer and only drive-in temperature factor is important for boron implanted wafer.

Original languageEnglish
Pages188-193
Number of pages6
Publication statusPublished - 01 Dec 1998
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

Fingerprint

Sheet resistance
Design of experiments
Analysis of variance (ANOVA)
Arsenic
Boron
Screening
Temperature
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hashim, U., Shaari, A. H., Ahmad, I., Shaari, S., & Majlis, B. Y. (1998). Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. 188-193. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .
Hashim, Uda ; Shaari, Abu Hassan ; Ahmad, Ibrahim ; Shaari, Sahbudin ; Majlis, Burhanudin Yeop. / Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .6 p.
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Hashim, U, Shaari, AH, Ahmad, I, Shaari, S & Majlis, BY 1998, 'Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology' Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, 24/11/98 - 26/11/98, pp. 188-193.

Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. / Hashim, Uda; Shaari, Abu Hassan; Ahmad, Ibrahim; Shaari, Sahbudin; Majlis, Burhanudin Yeop.

1998. 188-193 Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .

Research output: Contribution to conferencePaper

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Hashim U, Shaari AH, Ahmad I, Shaari S, Majlis BY. Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. 1998. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .