The statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 23 factorial design was used to evaluate three process variables in eight combination runs. The factors were implementation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance used to analyze the data shows that all main variables are important for arsenic implanted wafer and only drive-in temperature factor is important for boron implanted wafer.
|Number of pages||6|
|Publication status||Published - 01 Dec 1998|
|Event||Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia|
Duration: 24 Nov 1998 → 26 Nov 1998
|Other||Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)|
|Period||24/11/98 → 26/11/98|
All Science Journal Classification (ASJC) codes