Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology

Uda Hashim, Abu Hassan Shaari, Ibrahim Ahmad, Sahbudin Shaari, Burhanudin Yeop Majlis

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 23 factorial design was used to evaluate three process variables in eight combination runs. The factors were implementation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance used to analyze the data shows that all main variables are important for arsenic implanted wafer and only drive-in temperature factor is important for boron implanted wafer.

Original languageEnglish
Pages188-193
Number of pages6
Publication statusPublished - 01 Dec 1998
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hashim, U., Shaari, A. H., Ahmad, I., Shaari, S., & Majlis, B. Y. (1998). Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. 188-193. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .