InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

Pin Jern Ker, Andrew R.J. Marshall, Andrey B. Krysa, John P.R. David, Chee Hing Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.

Original languageEnglish
Title of host publicationTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Pages220-221
Number of pages2
DOIs
Publication statusPublished - 23 Oct 2012
Event2012 17th Opto-Electronics and Communications Conference, OECC 2012 - Busan, Korea, Republic of
Duration: 02 Jul 201206 Jul 2012

Publication series

NameTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

Other

Other2012 17th Opto-Electronics and Communications Conference, OECC 2012
CountryKorea, Republic of
CityBusan
Period02/07/1206/07/12

Fingerprint

Avalanche photodiodes
Bandwidth
Electrons
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R., & Tan, C. H. (2012). InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. In Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp. 220-221). [6276450] (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012). https://doi.org/10.1109/OECC.2012.6276450
Ker, Pin Jern ; Marshall, Andrew R.J. ; Krysa, Andrey B. ; David, John P.R. ; Tan, Chee Hing. / InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012. 2012. pp. 220-221 (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012).
@inproceedings{d79a5c3c194a4590b414a36db762a544,
title = "InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product",
abstract = "InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.",
author = "Ker, {Pin Jern} and Marshall, {Andrew R.J.} and Krysa, {Andrey B.} and David, {John P.R.} and Tan, {Chee Hing}",
year = "2012",
month = "10",
day = "23",
doi = "10.1109/OECC.2012.6276450",
language = "English",
isbn = "9781467309776",
series = "Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012",
pages = "220--221",
booktitle = "Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012",

}

Ker, PJ, Marshall, ARJ, Krysa, AB, David, JPR & Tan, CH 2012, InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. in Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012., 6276450, Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, pp. 220-221, 2012 17th Opto-Electronics and Communications Conference, OECC 2012, Busan, Korea, Republic of, 02/07/12. https://doi.org/10.1109/OECC.2012.6276450

InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. / Ker, Pin Jern; Marshall, Andrew R.J.; Krysa, Andrey B.; David, John P.R.; Tan, Chee Hing.

Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012. 2012. p. 220-221 6276450 (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

AU - Ker, Pin Jern

AU - Marshall, Andrew R.J.

AU - Krysa, Andrey B.

AU - David, John P.R.

AU - Tan, Chee Hing

PY - 2012/10/23

Y1 - 2012/10/23

N2 - InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.

AB - InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.

UR - http://www.scopus.com/inward/record.url?scp=84867598063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867598063&partnerID=8YFLogxK

U2 - 10.1109/OECC.2012.6276450

DO - 10.1109/OECC.2012.6276450

M3 - Conference contribution

AN - SCOPUS:84867598063

SN - 9781467309776

T3 - Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

SP - 220

EP - 221

BT - Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

ER -

Ker PJ, Marshall ARJ, Krysa AB, David JPR, Tan CH. InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. In Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012. 2012. p. 220-221. 6276450. (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012). https://doi.org/10.1109/OECC.2012.6276450