InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

Pin Jern Ker, Andrew R.J. Marshall, Andrey B. Krysa, John P.R. David, Chee Hing Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.

Original languageEnglish
Title of host publicationTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Pages220-221
Number of pages2
DOIs
Publication statusPublished - 23 Oct 2012
Event2012 17th Opto-Electronics and Communications Conference, OECC 2012 - Busan, Korea, Republic of
Duration: 02 Jul 201206 Jul 2012

Publication series

NameTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

Other

Other2012 17th Opto-Electronics and Communications Conference, OECC 2012
CountryKorea, Republic of
CityBusan
Period02/07/1206/07/12

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R., & Tan, C. H. (2012). InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. In Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp. 220-221). [6276450] (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012). https://doi.org/10.1109/OECC.2012.6276450