InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes

Pin Jern Ker, Andrew Marshall, Rajiv Gomes, John Paul David, Jo Shien Ng, Chee Hing Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K.

Original languageEnglish
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages276-277
Number of pages2
DOIs
Publication statusPublished - 01 Dec 2011
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: 09 Oct 201113 Oct 2011

Publication series

NameIEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period09/10/1113/10/11

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Ker, P. J., Marshall, A., Gomes, R., David, J. P., Ng, J. S., & Tan, C. H. (2011). InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 276-277). [6110533] (IEEE Photonic Society 24th Annual Meeting, PHO 2011). https://doi.org/10.1109/PHO.2011.6110533