InAs electron-avalanche photodiodes

From leaky diodes to extremely low noise avalanche photodiodes

Pin Jern Ker, Andrew Marshall, Rajiv Gomes, John Paul David, Jo Shien Ng, Chee Hing Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K.

Original languageEnglish
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages276-277
Number of pages2
DOIs
Publication statusPublished - 01 Dec 2011
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: 09 Oct 201113 Oct 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period09/10/1113/10/11

Fingerprint

electron avalanche
avalanches
low noise
photodiodes
diodes
high gain
temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Ker, P. J., Marshall, A., Gomes, R., David, J. P., Ng, J. S., & Tan, C. H. (2011). InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 276-277). [6110533] https://doi.org/10.1109/PHO.2011.6110533
Ker, Pin Jern ; Marshall, Andrew ; Gomes, Rajiv ; David, John Paul ; Ng, Jo Shien ; Tan, Chee Hing. / InAs electron-avalanche photodiodes : From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, PHO 2011. 2011. pp. 276-277
@inproceedings{1a074adcef094f1082e647cca92eba06,
title = "InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes",
abstract = "Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K.",
author = "Ker, {Pin Jern} and Andrew Marshall and Rajiv Gomes and David, {John Paul} and Ng, {Jo Shien} and Tan, {Chee Hing}",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/PHO.2011.6110533",
language = "English",
isbn = "9781424489404",
pages = "276--277",
booktitle = "IEEE Photonic Society 24th Annual Meeting, PHO 2011",

}

Ker, PJ, Marshall, A, Gomes, R, David, JP, Ng, JS & Tan, CH 2011, InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. in IEEE Photonic Society 24th Annual Meeting, PHO 2011., 6110533, pp. 276-277, 24th Annual Meeting on IEEE Photonic Society, PHO 2011, Arlington, VA, United States, 09/10/11. https://doi.org/10.1109/PHO.2011.6110533

InAs electron-avalanche photodiodes : From leaky diodes to extremely low noise avalanche photodiodes. / Ker, Pin Jern; Marshall, Andrew; Gomes, Rajiv; David, John Paul; Ng, Jo Shien; Tan, Chee Hing.

IEEE Photonic Society 24th Annual Meeting, PHO 2011. 2011. p. 276-277 6110533.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - InAs electron-avalanche photodiodes

T2 - From leaky diodes to extremely low noise avalanche photodiodes

AU - Ker, Pin Jern

AU - Marshall, Andrew

AU - Gomes, Rajiv

AU - David, John Paul

AU - Ng, Jo Shien

AU - Tan, Chee Hing

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K.

AB - Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K.

UR - http://www.scopus.com/inward/record.url?scp=84856007242&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856007242&partnerID=8YFLogxK

U2 - 10.1109/PHO.2011.6110533

DO - 10.1109/PHO.2011.6110533

M3 - Conference contribution

SN - 9781424489404

SP - 276

EP - 277

BT - IEEE Photonic Society 24th Annual Meeting, PHO 2011

ER -

Ker PJ, Marshall A, Gomes R, David JP, Ng JS, Tan CH. InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011. 2011. p. 276-277. 6110533 https://doi.org/10.1109/PHO.2011.6110533