Improvement of Cu-Al bond integrity on low k pad structures

Wong Boh Kid, Eu Poh Leng, C. C. Yong, Ooi Xin Yi, Boon Kar Yap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required and the results are compared with Au samples. In this study, the bond integrity and thermal aging of Cu-Al and Au-Al wire-bonds were investigated. The Copper and Gold wire-bonds samples were heat-treated at temperature of 225°C for 4.5, 13.5, 26, 52 and 97 hours respectively. The intermetallics of the wire-bonds, and in particular the Al-Cu interface, were studied. Discontinuous and non-uniform of Cu-Al intermetallics regions were found in the thermal aging samples. The thickness of Cu-Al intermetallics is growing linearly with the temperature as the diffusion rate increases in higher temperature. The Cu-Al bond is weak compare to Au-Al in accordance with aging through wire pull test.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages207-210
Number of pages4
DOIs
Publication statusPublished - 22 Dec 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia
Duration: 28 Sep 201130 Sep 2011

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CountryMalaysia
CityKota Kinabalu, Sabah
Period28/09/1130/09/11

Fingerprint

Wire
Intermetallics
Gold
Thermal aging
Aging of materials
Copper
Temperature
Electric properties
Mechanical properties

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kid, W. B., Leng, E. P., Yong, C. C., Yi, O. X., & Yap, B. K. (2011). Improvement of Cu-Al bond integrity on low k pad structures. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 207-210). [6088325] https://doi.org/10.1109/RSM.2011.6088325
Kid, Wong Boh ; Leng, Eu Poh ; Yong, C. C. ; Yi, Ooi Xin ; Yap, Boon Kar. / Improvement of Cu-Al bond integrity on low k pad structures. 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. pp. 207-210
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Kid, WB, Leng, EP, Yong, CC, Yi, OX & Yap, BK 2011, Improvement of Cu-Al bond integrity on low k pad structures. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088325, pp. 207-210, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, Malaysia, 28/09/11. https://doi.org/10.1109/RSM.2011.6088325

Improvement of Cu-Al bond integrity on low k pad structures. / Kid, Wong Boh; Leng, Eu Poh; Yong, C. C.; Yi, Ooi Xin; Yap, Boon Kar.

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 207-210 6088325.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kid WB, Leng EP, Yong CC, Yi OX, Yap BK. Improvement of Cu-Al bond integrity on low k pad structures. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 207-210. 6088325 https://doi.org/10.1109/RSM.2011.6088325