Improved series resistance model for CMOS ESD diodes

Norliza Binti Kamal, Albert Victor Kordesch, Ibrahim Bin Ahmad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit designers. Accurate series resistance in the diode forward region is critical especially for designing ESD protection circuits. This paper analyzes the effect of diode width and P to N (P active to N-tap active) distance on the extracted model Rs value in the standard level 3 SPICE diode model. Diodes of various widths and P-N distance were designed and fabricated in a CMOS 130 nm technology to get actual data measurements. Parameter extraction was done using the commercial BSIMProPlus model extraction software. Different diode widths and P-N distances produce forward IV curves with different slope, due to the changing series resistance. The slope represents the incremental series resistance. This study has been done with two types of diode, PN diode (P active in Nwell diode) and NP diode (N active in Pwell diode). The extracted Rs value shows a linear relationship to P-N distance and is proportional to inverse drawn width.

Original languageEnglish
Title of host publicationICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
Pages484-486
Number of pages3
DOIs
Publication statusPublished - 01 Dec 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia
Duration: 25 Nov 200827 Nov 2008

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CountryMalaysia
CityJohor Bahru, Johor
Period25/11/0827/11/08

Fingerprint

Diodes
Parameter extraction
Networks (circuits)
SPICE
Simulators

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kamal, N. B., Kordesch, A. V., & Ahmad, I. B. (2008). Improved series resistance model for CMOS ESD diodes. In ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics (pp. 484-486). [4770369] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2008.4770369
Kamal, Norliza Binti ; Kordesch, Albert Victor ; Ahmad, Ibrahim Bin. / Improved series resistance model for CMOS ESD diodes. ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics. 2008. pp. 484-486 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
@inproceedings{cf06b76b9f3743c5ae15213a07cc7740,
title = "Improved series resistance model for CMOS ESD diodes",
abstract = "Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit designers. Accurate series resistance in the diode forward region is critical especially for designing ESD protection circuits. This paper analyzes the effect of diode width and P to N (P active to N-tap active) distance on the extracted model Rs value in the standard level 3 SPICE diode model. Diodes of various widths and P-N distance were designed and fabricated in a CMOS 130 nm technology to get actual data measurements. Parameter extraction was done using the commercial BSIMProPlus model extraction software. Different diode widths and P-N distances produce forward IV curves with different slope, due to the changing series resistance. The slope represents the incremental series resistance. This study has been done with two types of diode, PN diode (P active in Nwell diode) and NP diode (N active in Pwell diode). The extracted Rs value shows a linear relationship to P-N distance and is proportional to inverse drawn width.",
author = "Kamal, {Norliza Binti} and Kordesch, {Albert Victor} and Ahmad, {Ibrahim Bin}",
year = "2008",
month = "12",
day = "1",
doi = "10.1109/SMELEC.2008.4770369",
language = "English",
isbn = "9781424425617",
series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
pages = "484--486",
booktitle = "ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics",

}

Kamal, NB, Kordesch, AV & Ahmad, IB 2008, Improved series resistance model for CMOS ESD diodes. in ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics., 4770369, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 484-486, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, Malaysia, 25/11/08. https://doi.org/10.1109/SMELEC.2008.4770369

Improved series resistance model for CMOS ESD diodes. / Kamal, Norliza Binti; Kordesch, Albert Victor; Ahmad, Ibrahim Bin.

ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics. 2008. p. 484-486 4770369 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Improved series resistance model for CMOS ESD diodes

AU - Kamal, Norliza Binti

AU - Kordesch, Albert Victor

AU - Ahmad, Ibrahim Bin

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit designers. Accurate series resistance in the diode forward region is critical especially for designing ESD protection circuits. This paper analyzes the effect of diode width and P to N (P active to N-tap active) distance on the extracted model Rs value in the standard level 3 SPICE diode model. Diodes of various widths and P-N distance were designed and fabricated in a CMOS 130 nm technology to get actual data measurements. Parameter extraction was done using the commercial BSIMProPlus model extraction software. Different diode widths and P-N distances produce forward IV curves with different slope, due to the changing series resistance. The slope represents the incremental series resistance. This study has been done with two types of diode, PN diode (P active in Nwell diode) and NP diode (N active in Pwell diode). The extracted Rs value shows a linear relationship to P-N distance and is proportional to inverse drawn width.

AB - Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit designers. Accurate series resistance in the diode forward region is critical especially for designing ESD protection circuits. This paper analyzes the effect of diode width and P to N (P active to N-tap active) distance on the extracted model Rs value in the standard level 3 SPICE diode model. Diodes of various widths and P-N distance were designed and fabricated in a CMOS 130 nm technology to get actual data measurements. Parameter extraction was done using the commercial BSIMProPlus model extraction software. Different diode widths and P-N distances produce forward IV curves with different slope, due to the changing series resistance. The slope represents the incremental series resistance. This study has been done with two types of diode, PN diode (P active in Nwell diode) and NP diode (N active in Pwell diode). The extracted Rs value shows a linear relationship to P-N distance and is proportional to inverse drawn width.

UR - http://www.scopus.com/inward/record.url?scp=65949111077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65949111077&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2008.4770369

DO - 10.1109/SMELEC.2008.4770369

M3 - Conference contribution

AN - SCOPUS:65949111077

SN - 9781424425617

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 484

EP - 486

BT - ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics

ER -

Kamal NB, Kordesch AV, Ahmad IB. Improved series resistance model for CMOS ESD diodes. In ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics. 2008. p. 484-486. 4770369. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2008.4770369