High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications

Pin Jern Ker, Chee Hing Tan, John P.R. David

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The leakage current, avalanche gain, excess noise and frequency response of InAs avalanche photodiodes (APDs) were investigated. Despite having a narrow bandgap, InAs APDs, which were fabricated using optimized fabrication procedures and surface passivation technique, were able to provide reasonably low leakage current for practical applications. The exponentially rising avalanche gain with increasing bias voltage without a classical avalanche breakdown exhibited its electron-dominated impact ionization characteristic and avalanche gain as high as 165 was measured. The excess noise or avalanche noise was found to be independent of gain and temperature with the excess noise factors fluctuating between 1.45 and 1.6 at high gain. The 3-dB bandwidth of InAs APDs was determined to be ~ 3.5 - 4 GHz and it was highly possible that the surface passivation dielectric and the unavailability of a lattice-matched semi-insulating substrate were the major limiting factors. However, unlike other mature APDs technologies, the 3-dB bandwidth of InAs APDs remained constant even up to the highest achievable avalanche gain, providing a record high gain-bandwidth product of ~ 580 GHz.

Original languageEnglish
Title of host publication4th International Conference on Photonics, ICP 2013 - Conference Proceeding
Pages78-80
Number of pages3
DOIs
Publication statusPublished - 01 Dec 2013
Event2013 IEEE 4th International Conference on Photonics, ICP 2013 - Melaka, Malaysia
Duration: 28 Oct 201330 Oct 2013

Other

Other2013 IEEE 4th International Conference on Photonics, ICP 2013
CountryMalaysia
CityMelaka
Period28/10/1330/10/13

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Avalanche photodiodes
Telecommunication
Infrared radiation
Electrons
Bandwidth
Passivation
Leakage currents
Impact ionization
Bias voltage
Frequency response
Energy gap
Fabrication
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ker, P. J., Tan, C. H., & David, J. P. R. (2013). High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. In 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp. 78-80). [6687073] https://doi.org/10.1109/ICP.2013.6687073
Ker, Pin Jern ; Tan, Chee Hing ; David, John P.R. / High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics, ICP 2013 - Conference Proceeding. 2013. pp. 78-80
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Ker, PJ, Tan, CH & David, JPR 2013, High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. in 4th International Conference on Photonics, ICP 2013 - Conference Proceeding., 6687073, pp. 78-80, 2013 IEEE 4th International Conference on Photonics, ICP 2013, Melaka, Malaysia, 28/10/13. https://doi.org/10.1109/ICP.2013.6687073

High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. / Ker, Pin Jern; Tan, Chee Hing; David, John P.R.

4th International Conference on Photonics, ICP 2013 - Conference Proceeding. 2013. p. 78-80 6687073.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Ker PJ, Tan CH, David JPR. High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. In 4th International Conference on Photonics, ICP 2013 - Conference Proceeding. 2013. p. 78-80. 6687073 https://doi.org/10.1109/ICP.2013.6687073