High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Andrew R.J. Marshall, Pin Jern Ker, Andrey Krysa, John P.R. David, Chee Hing Tan

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.

Original languageEnglish
Pages (from-to)23341-23349
Number of pages9
JournalOptics Express
Volume19
Issue number23
DOIs
Publication statusPublished - 07 Nov 2011

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electron avalanche
photodiodes
indium
high speed
bandwidth
products
avalanches

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Marshall, Andrew R.J. ; Ker, Pin Jern ; Krysa, Andrey ; David, John P.R. ; Tan, Chee Hing. / High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. In: Optics Express. 2011 ; Vol. 19, No. 23. pp. 23341-23349.
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High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. / Marshall, Andrew R.J.; Ker, Pin Jern; Krysa, Andrey; David, John P.R.; Tan, Chee Hing.

In: Optics Express, Vol. 19, No. 23, 07.11.2011, p. 23341-23349.

Research output: Contribution to journalArticle

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