Abstract
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.
| Original language | English |
|---|---|
| Pages (from-to) | 23341-23349 |
| Number of pages | 9 |
| Journal | Optics Express |
| Volume | 19 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 07 Nov 2011 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
Cite this
}
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. / Marshall, Andrew R.J.; Ker, Pin Jern; Krysa, Andrey; David, John P.R.; Tan, Chee Hing.
In: Optics Express, Vol. 19, No. 23, 07.11.2011, p. 23341-23349.Research output: Contribution to journal › Article
TY - JOUR
T1 - High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
AU - Marshall, Andrew R.J.
AU - Ker, Pin Jern
AU - Krysa, Andrey
AU - David, John P.R.
AU - Tan, Chee Hing
PY - 2011/11/7
Y1 - 2011/11/7
N2 - High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.
AB - High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.
UR - http://www.scopus.com/inward/record.url?scp=80755167794&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80755167794&partnerID=8YFLogxK
U2 - 10.1364/OE.19.023341
DO - 10.1364/OE.19.023341
M3 - Article
VL - 19
SP - 23341
EP - 23349
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 23
ER -