Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.
|Journal||IOP Conference Series: Earth and Environmental Science|
|Publication status||Published - 01 Jan 2013|
|Event||26th IAHR Symposium on Hydraulic Machinery and Systems - Beijing, China|
Duration: 19 Aug 2012 → 23 Aug 2012
All Science Journal Classification (ASJC) codes
- Environmental Science(all)
- Earth and Planetary Sciences(all)