High performance silicon lateral PIN photodiode

S. Kalthom Tasirin, P. Susthitha Menon, Ibrahim Ahmad, Siti Fazlili Abdullah

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.

Original languageEnglish
Article number012032
JournalIOP Conference Series: Earth and Environmental Science
Volume16
Issue number1
DOIs
Publication statusPublished - 01 Jan 2013
Event26th IAHR Symposium on Hydraulic Machinery and Systems - Beijing, China
Duration: 19 Aug 201223 Aug 2012

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fiber optics
silicon
wavelength
communications system
speed
parameter

All Science Journal Classification (ASJC) codes

  • Environmental Science(all)
  • Earth and Planetary Sciences(all)

Cite this

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abstract = "Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.",
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High performance silicon lateral PIN photodiode. / Tasirin, S. Kalthom; Menon, P. Susthitha; Ahmad, Ibrahim; Abdullah, Siti Fazlili.

In: IOP Conference Series: Earth and Environmental Science, Vol. 16, No. 1, 012032, 01.01.2013.

Research output: Contribution to journalConference article

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T1 - High performance silicon lateral PIN photodiode

AU - Tasirin, S. Kalthom

AU - Menon, P. Susthitha

AU - Ahmad, Ibrahim

AU - Abdullah, Siti Fazlili

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N2 - Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.

AB - Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.

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