High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

P. Susthitha Menon, S. Kalthom Tasirin, Ibrahim Ahmad, Siti Fazlili Abdullah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages403-406
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

Fingerprint

Photodiodes
Semiconductor quantum wells
Multilayers
Silicon
Optical fiber communication
Bias voltage
Quantum efficiency
Frequency response
Infrared radiation
Wavelength

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Menon, P. S., Tasirin, S. K., Ahmad, I., & Abdullah, S. F. (2012). High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 403-406). [6417172] https://doi.org/10.1109/SMElec.2012.6417172
Menon, P. Susthitha ; Tasirin, S. Kalthom ; Ahmad, Ibrahim ; Abdullah, Siti Fazlili. / High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 403-406
@inproceedings{8bfd7b468c664f70a27d409c4d696018,
title = "High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well",
abstract = "Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71{\%} and 21 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved.",
author = "Menon, {P. Susthitha} and Tasirin, {S. Kalthom} and Ibrahim Ahmad and Abdullah, {Siti Fazlili}",
year = "2012",
doi = "10.1109/SMElec.2012.6417172",
language = "English",
isbn = "9781467323963",
pages = "403--406",
booktitle = "2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings",

}

Menon, PS, Tasirin, SK, Ahmad, I & Abdullah, SF 2012, High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417172, pp. 403-406, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, Malaysia, 19/09/12. https://doi.org/10.1109/SMElec.2012.6417172

High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well. / Menon, P. Susthitha; Tasirin, S. Kalthom; Ahmad, Ibrahim; Abdullah, Siti Fazlili.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 403-406 6417172.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

AU - Menon, P. Susthitha

AU - Tasirin, S. Kalthom

AU - Ahmad, Ibrahim

AU - Abdullah, Siti Fazlili

PY - 2012

Y1 - 2012

N2 - Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved.

AB - Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved.

UR - http://www.scopus.com/inward/record.url?scp=84874182629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874182629&partnerID=8YFLogxK

U2 - 10.1109/SMElec.2012.6417172

DO - 10.1109/SMElec.2012.6417172

M3 - Conference contribution

SN - 9781467323963

SP - 403

EP - 406

BT - 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

ER -

Menon PS, Tasirin SK, Ahmad I, Abdullah SF. High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 403-406. 6417172 https://doi.org/10.1109/SMElec.2012.6417172