High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

S. K. Mah, Ibrahim Ahmad, Pin Jern Ker, Z. A. Noor Faizah

Research output: Contribution to journalArticle

Abstract

High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Telecommunication, Electronic and Computer Engineering
Volume10
Issue number2-6
Publication statusPublished - 01 Jan 2018

Fingerprint

Gate dielectrics
Threshold voltage
Voltage control
Oxides
MOSFET devices
Leakage currents
Transistors
Silica
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

@article{ed69f5e551384692934029fdcb695afa,
title = "High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control",
abstract = "High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness.",
author = "Mah, {S. K.} and Ibrahim Ahmad and Ker, {Pin Jern} and {Noor Faizah}, {Z. A.}",
year = "2018",
month = "1",
day = "1",
language = "English",
volume = "10",
pages = "1--5",
journal = "Journal of Telecommunication, Electronic and Computer Engineering",
issn = "2180-1843",
publisher = "Universiti Teknikal Malaysia Melaka",
number = "2-6",

}

High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control. / Mah, S. K.; Ahmad, Ibrahim; Ker, Pin Jern; Noor Faizah, Z. A.

In: Journal of Telecommunication, Electronic and Computer Engineering, Vol. 10, No. 2-6, 01.01.2018, p. 1-5.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

AU - Mah, S. K.

AU - Ahmad, Ibrahim

AU - Ker, Pin Jern

AU - Noor Faizah, Z. A.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness.

AB - High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness.

UR - http://www.scopus.com/inward/record.url?scp=85049382746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049382746&partnerID=8YFLogxK

M3 - Article

VL - 10

SP - 1

EP - 5

JO - Journal of Telecommunication, Electronic and Computer Engineering

JF - Journal of Telecommunication, Electronic and Computer Engineering

SN - 2180-1843

IS - 2-6

ER -