Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Siti Kudnie Sahari, Muhammad Kashif, Norsuzailina Mohamed Sutan, Zaidi Embong, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Rohana Sapawi, Burhanuddin Yeop Majlis, Ibrahim Ahmad

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.

Original languageEnglish
Pages (from-to)64-68
Number of pages5
JournalMicroelectronics International
Volume34
Issue number2
DOIs
Publication statusPublished - 01 Jan 2017

Fingerprint

Germanium
Growth kinetics
Sputtering
germanium
sputtering
kinetics
Chemical analysis
Oxides
Chemical cleaning
chemical cleaning
ambience
Field effect transistors
Aluminum
oxides
X ray photoelectron spectroscopy
Metals
Annealing
Oxygen
field effect transistors
Oxidation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Sahari, Siti Kudnie ; Kashif, Muhammad ; Sutan, Norsuzailina Mohamed ; Embong, Zaidi ; Nik Zaini Fathi, Nik Amni Fathi ; Hamzah, Azrul Azlan ; Sapawi, Rohana ; Majlis, Burhanuddin Yeop ; Ahmad, Ibrahim. / Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium. In: Microelectronics International. 2017 ; Vol. 34, No. 2. pp. 64-68.
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abstract = "Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.",
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Sahari, SK, Kashif, M, Sutan, NM, Embong, Z, Nik Zaini Fathi, NAF, Hamzah, AA, Sapawi, R, Majlis, BY & Ahmad, I 2017, 'Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium', Microelectronics International, vol. 34, no. 2, pp. 64-68. https://doi.org/10.1108/MI-12-2015-0099

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium. / Sahari, Siti Kudnie; Kashif, Muhammad; Sutan, Norsuzailina Mohamed; Embong, Zaidi; Nik Zaini Fathi, Nik Amni Fathi; Hamzah, Azrul Azlan; Sapawi, Rohana; Majlis, Burhanuddin Yeop; Ahmad, Ibrahim.

In: Microelectronics International, Vol. 34, No. 2, 01.01.2017, p. 64-68.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

AU - Sahari, Siti Kudnie

AU - Kashif, Muhammad

AU - Sutan, Norsuzailina Mohamed

AU - Embong, Zaidi

AU - Nik Zaini Fathi, Nik Amni Fathi

AU - Hamzah, Azrul Azlan

AU - Sapawi, Rohana

AU - Majlis, Burhanuddin Yeop

AU - Ahmad, Ibrahim

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.

AB - Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.

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