Gamma radiation induced nickel oxide/reduced graphene oxide nanoflowers for improved dye-sensitized solar cells

H. Abdullah, S. Y. Lye, S. Mahalingam, I. Asshari, B. Yuliarto, Abreeza Noorlina Abd. Manap

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Gamma radiation (γ) exposure was used in dye-sensitised solar cell application to improve the power conversion efficiency. Nickel oxide/reduced graphene oxide (NiO/rGO) as the photoanode layer was prepared by chemical bath deposition method. The NiO/rGO samples were used as the control to analyse the NiO/rGO exposed to γ (NiO/rGO-γ). XRD, FESEM and UV–Vis measurement were conducted to study the structure, morphology and the optical analysis of the samples. NiO/rGO-γ nanoflowers were observed through FESEM images with improved morphology. The porosity of the thin films was also increased after the exposure of γ radiation. The increased energy band gap of NiO/rGO-γ annealed at 400 °C exhibited higher power conversion efficiency of 1.03% with Jsc, Voc anf FF of 29 mA/cm2, 0.15 and 0.3 V, respectively.

Original languageEnglish
Pages (from-to)9643-9651
Number of pages9
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number11
DOIs
Publication statusPublished - 01 Jun 2018

Fingerprint

Nanoflowers
Nickel oxide
Graphite
nickel oxides
Gamma rays
Oxides
Graphene
graphene
solar cells
dyes
gamma rays
oxides
Conversion efficiency
radiation dosage
Band structure
energy bands
baths
Energy gap
Porosity
Dye-sensitized solar cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Gamma radiation induced nickel oxide/reduced graphene oxide nanoflowers for improved dye-sensitized solar cells",
abstract = "Gamma radiation (γ) exposure was used in dye-sensitised solar cell application to improve the power conversion efficiency. Nickel oxide/reduced graphene oxide (NiO/rGO) as the photoanode layer was prepared by chemical bath deposition method. The NiO/rGO samples were used as the control to analyse the NiO/rGO exposed to γ (NiO/rGO-γ). XRD, FESEM and UV–Vis measurement were conducted to study the structure, morphology and the optical analysis of the samples. NiO/rGO-γ nanoflowers were observed through FESEM images with improved morphology. The porosity of the thin films was also increased after the exposure of γ radiation. The increased energy band gap of NiO/rGO-γ annealed at 400 °C exhibited higher power conversion efficiency of 1.03{\%} with Jsc, Voc anf FF of 29 mA/cm2, 0.15 and 0.3 V, respectively.",
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Gamma radiation induced nickel oxide/reduced graphene oxide nanoflowers for improved dye-sensitized solar cells. / Abdullah, H.; Lye, S. Y.; Mahalingam, S.; Asshari, I.; Yuliarto, B.; Abd. Manap, Abreeza Noorlina.

In: Journal of Materials Science: Materials in Electronics, Vol. 29, No. 11, 01.06.2018, p. 9643-9651.

Research output: Contribution to journalArticle

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T1 - Gamma radiation induced nickel oxide/reduced graphene oxide nanoflowers for improved dye-sensitized solar cells

AU - Abdullah, H.

AU - Lye, S. Y.

AU - Mahalingam, S.

AU - Asshari, I.

AU - Yuliarto, B.

AU - Abd. Manap, Abreeza Noorlina

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AB - Gamma radiation (γ) exposure was used in dye-sensitised solar cell application to improve the power conversion efficiency. Nickel oxide/reduced graphene oxide (NiO/rGO) as the photoanode layer was prepared by chemical bath deposition method. The NiO/rGO samples were used as the control to analyse the NiO/rGO exposed to γ (NiO/rGO-γ). XRD, FESEM and UV–Vis measurement were conducted to study the structure, morphology and the optical analysis of the samples. NiO/rGO-γ nanoflowers were observed through FESEM images with improved morphology. The porosity of the thin films was also increased after the exposure of γ radiation. The increased energy band gap of NiO/rGO-γ annealed at 400 °C exhibited higher power conversion efficiency of 1.03% with Jsc, Voc anf FF of 29 mA/cm2, 0.15 and 0.3 V, respectively.

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