Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell

Kam Hoe Ong, Agileswari Ramasamy, Panagiota Arnou, Biancamaria Maniscalco, Jake W. Bowers, Chandan Kumar Chakrabarty, Marayati Marsadek

Research output: Contribution to journalArticle

Abstract

As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2 can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In this paper, a new method is proposed to form a Molybdenum Oxide (MoOx) barrier layer in between of the Mo back contact using plasma jet under atmospheric based conditions. The effect of MoOx compound (MoO2 and MoO3) towards the efficiency of the device is investigated. It has been proven that a thin layer of MoOx barrier layer is able to control the formation of MoSe2 effectively and provide a significant improvement in electrical properties of the devices. A power conversion efficiency of 5.24% with least efficiency variation across the champion device was achieved which demonstrates the importance of this methodology on small area devices.

Original languageEnglish
Pages (from-to)723-729
Number of pages7
JournalMaterials Technology
Volume33
Issue number11
DOIs
Publication statusPublished - 19 Sep 2018

Fingerprint

Molybdenum oxide
molybdenum oxides
barrier layers
solar cells
Electric properties
thin films
Plasma jets
Delamination
Conversion efficiency
electrical properties
Solar cells
Fabrication
plasma jets
absorbers
Thin film solar cells
methodology
fabrication
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell",
abstract = "As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2 can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In this paper, a new method is proposed to form a Molybdenum Oxide (MoOx) barrier layer in between of the Mo back contact using plasma jet under atmospheric based conditions. The effect of MoOx compound (MoO2 and MoO3) towards the efficiency of the device is investigated. It has been proven that a thin layer of MoOx barrier layer is able to control the formation of MoSe2 effectively and provide a significant improvement in electrical properties of the devices. A power conversion efficiency of 5.24{\%} with least efficiency variation across the champion device was achieved which demonstrates the importance of this methodology on small area devices.",
author = "Ong, {Kam Hoe} and Agileswari Ramasamy and Panagiota Arnou and Biancamaria Maniscalco and {W. Bowers}, Jake and {Kumar Chakrabarty}, Chandan and Marayati Marsadek",
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Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell. / Ong, Kam Hoe; Ramasamy, Agileswari; Arnou, Panagiota; Maniscalco, Biancamaria; W. Bowers, Jake; Kumar Chakrabarty, Chandan; Marsadek, Marayati.

In: Materials Technology, Vol. 33, No. 11, 19.09.2018, p. 723-729.

Research output: Contribution to journalArticle

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T1 - Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell

AU - Ong, Kam Hoe

AU - Ramasamy, Agileswari

AU - Arnou, Panagiota

AU - Maniscalco, Biancamaria

AU - W. Bowers, Jake

AU - Kumar Chakrabarty, Chandan

AU - Marsadek, Marayati

PY - 2018/9/19

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