Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices

S. F S Farooq, Fazrena Azlee Hamid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the feasibility of implementing COMFET at submicron length where transistor do not follow square law and a variety of second order effects degrade the linearity of COMFET. The simulated THD at 1 kHz of COMFET and other transconductors are compared.

Original languageEnglish
Title of host publicationSCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region"
Pages49-52
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region", SCOReD 2006 - Shah Alam, Malaysia
Duration: 27 Jun 200628 Jun 2006

Other

Other2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region", SCOReD 2006
CountryMalaysia
CityShah Alam
Period27/06/0628/06/06

Fingerprint

Field effect transistors
Composite materials
Transistors
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Farooq, S. F. S., & Hamid, F. A. (2006). Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices. In SCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region" (pp. 49-52). [4339306] https://doi.org/10.1109/SCORED.2006.4339306
Farooq, S. F S ; Hamid, Fazrena Azlee. / Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices. SCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region". 2006. pp. 49-52
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Farooq, SFS & Hamid, FA 2006, Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices. in SCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region"., 4339306, pp. 49-52, 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region", SCOReD 2006, Shah Alam, Malaysia, 27/06/06. https://doi.org/10.1109/SCORED.2006.4339306

Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices. / Farooq, S. F S; Hamid, Fazrena Azlee.

SCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region". 2006. p. 49-52 4339306.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Farooq SFS, Hamid FA. Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices. In SCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region". 2006. p. 49-52. 4339306 https://doi.org/10.1109/SCORED.2006.4339306