Erbium-doped waveguide devices for WDM applications

Marco Federighi, Noor Shamsiah Othman, Fabrizio Di Pasquale

Research output: Contribution to journalConference article

Abstract

Considerable advances have been made in the study of Er-doped waveguides for telecommunications application. These devices have been developed to allow on-chip integration between active and passive components, and differ from Er-doped fiber amplifiers in their much smaller size. To be of any use, these devices must provide gains of the order of a few dB/cm, which can be achieved with Er concentrations of about 1020 ions/cm3, or about an order of magnitude higher than in fibers. Furthermore, they should be fabricated at low temperature or co-doped with Al or P oxides to prevent Er ion pair formation.

Original languageEnglish
Pages (from-to)85-86
Number of pages2
JournalLEOS Summer Topical Meeting
Publication statusPublished - 01 Jan 1998

Fingerprint

Erbium
Wavelength division multiplexing
erbium
Waveguides
waveguides
Fiber amplifiers
fibers
Ions
Telecommunication
telecommunication
ions
amplifiers
chips
Oxides
oxides
Fibers
Temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Federighi, Marco ; Othman, Noor Shamsiah ; Di Pasquale, Fabrizio. / Erbium-doped waveguide devices for WDM applications. In: LEOS Summer Topical Meeting. 1998 ; pp. 85-86.
@article{d5c90f2f05b74bd5a8769ea141d2b61f,
title = "Erbium-doped waveguide devices for WDM applications",
abstract = "Considerable advances have been made in the study of Er-doped waveguides for telecommunications application. These devices have been developed to allow on-chip integration between active and passive components, and differ from Er-doped fiber amplifiers in their much smaller size. To be of any use, these devices must provide gains of the order of a few dB/cm, which can be achieved with Er concentrations of about 1020 ions/cm3, or about an order of magnitude higher than in fibers. Furthermore, they should be fabricated at low temperature or co-doped with Al or P oxides to prevent Er ion pair formation.",
author = "Marco Federighi and Othman, {Noor Shamsiah} and {Di Pasquale}, Fabrizio",
year = "1998",
month = "1",
day = "1",
language = "English",
pages = "85--86",
journal = "LEOS Summer Topical Meeting",
issn = "1099-4742",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Erbium-doped waveguide devices for WDM applications. / Federighi, Marco; Othman, Noor Shamsiah; Di Pasquale, Fabrizio.

In: LEOS Summer Topical Meeting, 01.01.1998, p. 85-86.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Erbium-doped waveguide devices for WDM applications

AU - Federighi, Marco

AU - Othman, Noor Shamsiah

AU - Di Pasquale, Fabrizio

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Considerable advances have been made in the study of Er-doped waveguides for telecommunications application. These devices have been developed to allow on-chip integration between active and passive components, and differ from Er-doped fiber amplifiers in their much smaller size. To be of any use, these devices must provide gains of the order of a few dB/cm, which can be achieved with Er concentrations of about 1020 ions/cm3, or about an order of magnitude higher than in fibers. Furthermore, they should be fabricated at low temperature or co-doped with Al or P oxides to prevent Er ion pair formation.

AB - Considerable advances have been made in the study of Er-doped waveguides for telecommunications application. These devices have been developed to allow on-chip integration between active and passive components, and differ from Er-doped fiber amplifiers in their much smaller size. To be of any use, these devices must provide gains of the order of a few dB/cm, which can be achieved with Er concentrations of about 1020 ions/cm3, or about an order of magnitude higher than in fibers. Furthermore, they should be fabricated at low temperature or co-doped with Al or P oxides to prevent Er ion pair formation.

UR - http://www.scopus.com/inward/record.url?scp=0031645752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031645752&partnerID=8YFLogxK

M3 - Conference article

SP - 85

EP - 86

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

SN - 1099-4742

ER -