Erbium-doped waveguide devices for WDM applications

Marco Federighi, Noor Shamsiah Othman, Fabrizio Di Pasquale

Research output: Contribution to journalConference article

Abstract

Considerable advances have been made in the study of Er-doped waveguides for telecommunications application. These devices have been developed to allow on-chip integration between active and passive components, and differ from Er-doped fiber amplifiers in their much smaller size. To be of any use, these devices must provide gains of the order of a few dB/cm, which can be achieved with Er concentrations of about 1020 ions/cm3, or about an order of magnitude higher than in fibers. Furthermore, they should be fabricated at low temperature or co-doped with Al or P oxides to prevent Er ion pair formation.

Original languageEnglish
Pages (from-to)85-86
Number of pages2
JournalLEOS Summer Topical Meeting
Publication statusPublished - 01 Jan 1998

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Erbium-doped waveguide devices for WDM applications'. Together they form a unique fingerprint.

  • Cite this