Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices

Abdullah Omar, Ibrahim Ahmad, Ahmad Jais Alias

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted gate electrode. The introduction of phosphorus from 7×10 15 to 3×l0 l6/cm 3 by ion implantation at 40 keV has reduced the sheet resistance from 100 ohm/ to 25 ohm/ comparable to the gate produced by in-situ phosphorus doping. The microstructures of polysilicon gate electrode were studied using TEM. and found that grains of samples in polysilicon doped by in-situ are larger than other samples.

Original languageEnglish
Title of host publicationICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages95-98
Number of pages4
Publication statusPublished - 01 Dec 2000
Event2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000 - Port Dickson, Malaysia
Duration: 13 Nov 200015 Nov 2000

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000
CountryMalaysia
CityPort Dickson
Period13/11/0015/11/00

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Omar, A., Ahmad, I., & Alias, A. J. (2000). Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices. In ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 95-98). [932441] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).