Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device

Norani Atan, Ibrahim Ahmad, Burhanuddin Bin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, IOFF, and drive current, ION for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such as high-K constant, low IOFF, higher ION, threshold voltage VTH, and electrical characteristics were demonstrated. From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages56-59
Number of pages4
ISBN (Electronic)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period27/08/1429/08/14

Fingerprint

Metals
Leakage currents
Gate dielectrics
Threshold voltage
Dielectric properties
Permittivity
Fabrication

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Atan, N., Ahmad, I., & Majlis, B. B. Y. (2014). Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 56-59). [6920794] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920794
Atan, Norani ; Ahmad, Ibrahim ; Majlis, Burhanuddin Bin Yeop. / Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 56-59
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Atan, N, Ahmad, I & Majlis, BBY 2014, Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920794, Institute of Electrical and Electronics Engineers Inc., pp. 56-59, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, Malaysia, 27/08/14. https://doi.org/10.1109/SMELEC.2014.6920794

Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device. / Atan, Norani; Ahmad, Ibrahim; Majlis, Burhanuddin Bin Yeop.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 56-59 6920794.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, IOFF, and drive current, ION for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such as high-K constant, low IOFF, higher ION, threshold voltage VTH, and electrical characteristics were demonstrated. From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2.

AB - This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, IOFF, and drive current, ION for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such as high-K constant, low IOFF, higher ION, threshold voltage VTH, and electrical characteristics were demonstrated. From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2.

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Atan N, Ahmad I, Majlis BBY. Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 56-59. 6920794 https://doi.org/10.1109/SMELEC.2014.6920794