Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films

M. S. Jamal, S. A. Shahahmadi, P. Chelvanathan, Hamad F. Alharbi, Mohammad R. Karim, Mushtaq Ahmad Dar, Monis Luqman, Nabeel H. Alharthi, Yahya S. Al-Harthi, M. Aminuzzaman, Nilofar Asim, K. Sopian, Sieh Kiong Tiong, Nowshad Amin, Md Akhtaruzzaman

Research output: Contribution to journalArticle

Abstract

In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 °C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 Ω cm to 72 Ω cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices.

Original languageEnglish
Article number102360
JournalResults in Physics
Volume14
DOIs
Publication statusPublished - 01 Sep 2019

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nickel oxides
thin films
temperature
oxide films
grain size
optical properties
calcium oxides
room temperature
transmittance
radio frequencies
magnetron sputtering
surface roughness
electrical properties
microscopy
decomposition
electrical resistivity
scanning
probes
glass
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jamal, M. S., Shahahmadi, S. A., Chelvanathan, P., Alharbi, H. F., Karim, M. R., Ahmad Dar, M., ... Akhtaruzzaman, M. (2019). Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films. Results in Physics, 14, [102360]. https://doi.org/10.1016/j.rinp.2019.102360
Jamal, M. S. ; Shahahmadi, S. A. ; Chelvanathan, P. ; Alharbi, Hamad F. ; Karim, Mohammad R. ; Ahmad Dar, Mushtaq ; Luqman, Monis ; Alharthi, Nabeel H. ; Al-Harthi, Yahya S. ; Aminuzzaman, M. ; Asim, Nilofar ; Sopian, K. ; Tiong, Sieh Kiong ; Amin, Nowshad ; Akhtaruzzaman, Md. / Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films. In: Results in Physics. 2019 ; Vol. 14.
@article{dcf3d70315714a0c8a68809a5ab225d4,
title = "Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films",
abstract = "In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 °C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 Ω cm to 72 Ω cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices.",
author = "Jamal, {M. S.} and Shahahmadi, {S. A.} and P. Chelvanathan and Alharbi, {Hamad F.} and Karim, {Mohammad R.} and {Ahmad Dar}, Mushtaq and Monis Luqman and Alharthi, {Nabeel H.} and Al-Harthi, {Yahya S.} and M. Aminuzzaman and Nilofar Asim and K. Sopian and Tiong, {Sieh Kiong} and Nowshad Amin and Md Akhtaruzzaman",
year = "2019",
month = "9",
day = "1",
doi = "10.1016/j.rinp.2019.102360",
language = "English",
volume = "14",
journal = "Results in Physics",
issn = "2211-3797",
publisher = "Elsevier BV",

}

Jamal, MS, Shahahmadi, SA, Chelvanathan, P, Alharbi, HF, Karim, MR, Ahmad Dar, M, Luqman, M, Alharthi, NH, Al-Harthi, YS, Aminuzzaman, M, Asim, N, Sopian, K, Tiong, SK, Amin, N & Akhtaruzzaman, M 2019, 'Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films', Results in Physics, vol. 14, 102360. https://doi.org/10.1016/j.rinp.2019.102360

Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films. / Jamal, M. S.; Shahahmadi, S. A.; Chelvanathan, P.; Alharbi, Hamad F.; Karim, Mohammad R.; Ahmad Dar, Mushtaq; Luqman, Monis; Alharthi, Nabeel H.; Al-Harthi, Yahya S.; Aminuzzaman, M.; Asim, Nilofar; Sopian, K.; Tiong, Sieh Kiong; Amin, Nowshad; Akhtaruzzaman, Md.

In: Results in Physics, Vol. 14, 102360, 01.09.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films

AU - Jamal, M. S.

AU - Shahahmadi, S. A.

AU - Chelvanathan, P.

AU - Alharbi, Hamad F.

AU - Karim, Mohammad R.

AU - Ahmad Dar, Mushtaq

AU - Luqman, Monis

AU - Alharthi, Nabeel H.

AU - Al-Harthi, Yahya S.

AU - Aminuzzaman, M.

AU - Asim, Nilofar

AU - Sopian, K.

AU - Tiong, Sieh Kiong

AU - Amin, Nowshad

AU - Akhtaruzzaman, Md

PY - 2019/9/1

Y1 - 2019/9/1

N2 - In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 °C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 Ω cm to 72 Ω cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices.

AB - In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 °C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 Ω cm to 72 Ω cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices.

UR - http://www.scopus.com/inward/record.url?scp=85067187106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067187106&partnerID=8YFLogxK

U2 - 10.1016/j.rinp.2019.102360

DO - 10.1016/j.rinp.2019.102360

M3 - Article

AN - SCOPUS:85067187106

VL - 14

JO - Results in Physics

JF - Results in Physics

SN - 2211-3797

M1 - 102360

ER -

Jamal MS, Shahahmadi SA, Chelvanathan P, Alharbi HF, Karim MR, Ahmad Dar M et al. Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films. Results in Physics. 2019 Sep 1;14. 102360. https://doi.org/10.1016/j.rinp.2019.102360