Effect of wafer thinning methods towards fracture strength and topography of silicon die

Hoh Huey Jiun, Ibrahim Ahmad, Azman Jalar, Ghazali Omar

Research output: Contribution to journalArticle

34 Citations (Scopus)


This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball breaker test with respect to die surface finish. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. Stress relief process with 25 μm removal is able to strengthen 100 μm wafer by 20.4% using chemical wet etch and 75 μm wafer by 36.4% with plasma etch. Relatively, plasma etching shows higher fracture strength and flexibility compared to chemical wet etch. This is due to topography of the finished surface of plasma etch is smoother and rounded, leading to a reduced stress concentration, hence improved fracture strength.

Original languageEnglish
Pages (from-to)836-845
Number of pages10
JournalMicroelectronics Reliability
Issue number5-6
Publication statusPublished - 01 May 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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