Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor

A. H. Afifah Maheran, P. S. Menon, Ibrahim Ahmad, S. Shaari

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device, this experiment will focus on finding the best combination on process parameter to achieve the best value of Vth. The Halo structure variable process parameters are the Halo implantation dose, the Halo implantation tilting angle, the Source/Drain implantation dose and the compensation implantation dose. The design of the planar device consists of a combination of high permittivity material (high-k) and a metal gate. Titanium dioxide was used as the high-k material instead of the traditional SiO 2 dielectric and tungsten silicide was used as the metal gate. The optimization process was executed using Taguchi's L9 array to obtain a robust design. Taguchi's Nominal-the-Best signal-to-noise ratio was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.289 V±12.7% which is in line with projections made by the International Technology Roadmap for Semiconductors.

Original languageEnglish
Pages (from-to)155-161
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume17
DOIs
Publication statusPublished - 01 Jan 2014

Fingerprint

Threshold voltage
threshold voltage
halos
implantation
Transistors
transistors
Metals
dosage
Tungsten
MOS devices
metals
Titanium dioxide
Signal to noise ratio
Permittivity
semiconductor devices
titanium oxides
Semiconductor materials
CMOS
tungsten
signal to noise ratios

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device, this experiment will focus on finding the best combination on process parameter to achieve the best value of Vth. The Halo structure variable process parameters are the Halo implantation dose, the Halo implantation tilting angle, the Source/Drain implantation dose and the compensation implantation dose. The design of the planar device consists of a combination of high permittivity material (high-k) and a metal gate. Titanium dioxide was used as the high-k material instead of the traditional SiO 2 dielectric and tungsten silicide was used as the metal gate. The optimization process was executed using Taguchi's L9 array to obtain a robust design. Taguchi's Nominal-the-Best signal-to-noise ratio was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.289 V±12.7{\%} which is in line with projections made by the International Technology Roadmap for Semiconductors.",
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Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor. / Afifah Maheran, A. H.; Menon, P. S.; Ahmad, Ibrahim; Shaari, S.

In: Materials Science in Semiconductor Processing, Vol. 17, 01.01.2014, p. 155-161.

Research output: Contribution to journalArticle

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