Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF

Julius Teo Han Loong, Khairul Anwar Syahmi Che Ismail, Fazrena Azlee Hamid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name 'memory resistor'. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bit-aliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the RO-PUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used.

Original languageEnglish
Title of host publication2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016
EditorsRosdiadee Nordin, Mohd Fais Mansor, Mahamod Ismail
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages445-450
Number of pages6
ISBN (Electronic)9781509028894
DOIs
Publication statusPublished - 27 Mar 2017
Event2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016 - Putrajaya, Malaysia
Duration: 14 Nov 201616 Nov 2016

Publication series

Name2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016

Other

Other2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016
CountryMalaysia
CityPutrajaya
Period14/11/1616/11/16

Fingerprint

Memristors
random variables
Random variables
resistors
uniqueness
linearity
Resistors
Passive networks
electric potential
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Control and Systems Engineering
  • Hardware and Architecture
  • Computer Networks and Communications
  • Instrumentation

Cite this

Loong, J. T. H., Ismail, K. A. S. C., & Hamid, F. A. (2017). Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF. In R. Nordin, M. F. Mansor, & M. Ismail (Eds.), 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016 (pp. 445-450). [7888086] (2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICAEES.2016.7888086
Loong, Julius Teo Han ; Ismail, Khairul Anwar Syahmi Che ; Hamid, Fazrena Azlee. / Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF. 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016. editor / Rosdiadee Nordin ; Mohd Fais Mansor ; Mahamod Ismail. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 445-450 (2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016).
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Loong, JTH, Ismail, KASC & Hamid, FA 2017, Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF. in R Nordin, MF Mansor & M Ismail (eds), 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016., 7888086, 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016, Institute of Electrical and Electronics Engineers Inc., pp. 445-450, 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016, Putrajaya, Malaysia, 14/11/16. https://doi.org/10.1109/ICAEES.2016.7888086

Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF. / Loong, Julius Teo Han; Ismail, Khairul Anwar Syahmi Che; Hamid, Fazrena Azlee.

2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016. ed. / Rosdiadee Nordin; Mohd Fais Mansor; Mahamod Ismail. Institute of Electrical and Electronics Engineers Inc., 2017. p. 445-450 7888086 (2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name 'memory resistor'. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bit-aliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the RO-PUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used.

AB - The memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name 'memory resistor'. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bit-aliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the RO-PUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used.

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Loong JTH, Ismail KASC, Hamid FA. Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF. In Nordin R, Mansor MF, Ismail M, editors, 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 445-450. 7888086. (2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016). https://doi.org/10.1109/ICAEES.2016.7888086