Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

M. S. Chowdhury, S. A. Shahahmadi, P. Chelvanathan, S. K. Tiong, N. Amin, K. Techato, N. Nuthammachot, T. Chowdhury, M. Suklueng

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Abstract

In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm−3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance.

Original languageEnglish
Article number102839
JournalResults in Physics
Volume16
DOIs
Publication statusPublished - Mar 2020

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chowdhury, M. S., Shahahmadi, S. A., Chelvanathan, P., Tiong, S. K., Amin, N., Techato, K., Nuthammachot, N., Chowdhury, T., & Suklueng, M. (2020). Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D. Results in Physics, 16, [102839]. https://doi.org/10.1016/j.rinp.2019.102839