Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers

Abdullah b. Omar, Ibrahim Ahmad

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×1014 atoms/cm2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth.

Original languageEnglish
Pages80-85
Number of pages6
Publication statusPublished - 01 Dec 1998
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

Fingerprint

Silicon wafers
Rapid thermal annealing
Oxidation
Silica
Silicon nitride
Ion implantation
Phosphorus
Tunnels
Silicon
Atoms
Oxides
Hot Temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Omar, A. B., & Ahmad, I. (1998). Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers. 80-85. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .
Omar, Abdullah b. ; Ahmad, Ibrahim. / Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .6 p.
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abstract = "The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×1014 atoms/cm2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth.",
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Omar, AB & Ahmad, I 1998, 'Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers' Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, 24/11/98 - 26/11/98, pp. 80-85.

Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers. / Omar, Abdullah b.; Ahmad, Ibrahim.

1998. 80-85 Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .

Research output: Contribution to conferencePaper

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N2 - The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×1014 atoms/cm2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth.

AB - The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×1014 atoms/cm2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth.

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Omar AB, Ahmad I. Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers. 1998. Paper presented at Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, .