The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×1014 atoms/cm2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth.
|Number of pages||6|
|Publication status||Published - 01 Dec 1998|
|Event||Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia|
Duration: 24 Nov 1998 → 26 Nov 1998
|Other||Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)|
|Period||24/11/98 → 26/11/98|
All Science Journal Classification (ASJC) codes