Development of insulated Cu wire ball bonding

H. Y. Leong, Faizal Zulkifli Mohd, Mohd Rusli Ibrahim, Wong Boh Kid, Navas Khan, Boon Kar Yap, L. C. Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Insulated Cu wire is the next generation technology in fine pitch and high density wire bonding, which enables wire crossing and touching without concern for wire-to-wire shorts. However, insulated Cu wire bonding is still at the infant stage compared to Cu wire bonding. This study investigates the wire bond process in term of free air ball (FAB) and ball formation using 20μm Cu wire and insulated Cu wire with target bonded ball size about 35μm. Insulated Cu wire needs a different set of EFO setting compared to Cu wire. Spherical and residue free FAB of insulated Cu was able to form with forming gas. With a set electric flame off (EFO) setting, insulated Cu FAB consistently larger than Cu FAB. The experimental results show clearly that the energy required for the FAB formation for insulated Cu wire is ∼20% lower than the Cu wire, probably due to the lesser heat loss from the wire during the EFO firing. Key bonding parameters for insulated Cu were EFO current, EFO time, bond power and bond force to meet the required ball size. This study shows that insulated Cu wire requires less demanding ball bond parameters than Cu wire, indicating softer ball which could be favorable for the sensitive bond structures. Bonding strength in term of ball shear and wire pull strength between the insulated Cu wire and Cu wire is very similar. Other key responses such as Al remnant, pad cratering and intermetallic compound have been studied and will be discussed in details in the paper. Our research successfully established good wire bonding process conditions for the insulated Cu wire and subsequently demonstrated that the technology is feasible using presently available wire bonder.

Original languageEnglish
Title of host publication2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012
DOIs
Publication statusPublished - 01 Dec 2012
Event2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012 - Ipoh, Perak, Malaysia
Duration: 06 Nov 201208 Nov 2012

Publication series

NameProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
ISSN (Print)1089-8190

Other

Other2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012
CountryMalaysia
CityIpoh, Perak
Period06/11/1208/11/12

Fingerprint

Wire
Air
Electric currents
Heat losses
Intermetallics

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Leong, H. Y., Mohd, F. Z., Ibrahim, M. R., Kid, W. B., Khan, N., Yap, B. K., & Tan, L. C. (2012). Development of insulated Cu wire ball bonding. In 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012 [6521829] (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium). https://doi.org/10.1109/IEMT.2012.6521829
Leong, H. Y. ; Mohd, Faizal Zulkifli ; Ibrahim, Mohd Rusli ; Kid, Wong Boh ; Khan, Navas ; Yap, Boon Kar ; Tan, L. C. / Development of insulated Cu wire ball bonding. 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012. 2012. (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium).
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abstract = "Insulated Cu wire is the next generation technology in fine pitch and high density wire bonding, which enables wire crossing and touching without concern for wire-to-wire shorts. However, insulated Cu wire bonding is still at the infant stage compared to Cu wire bonding. This study investigates the wire bond process in term of free air ball (FAB) and ball formation using 20μm Cu wire and insulated Cu wire with target bonded ball size about 35μm. Insulated Cu wire needs a different set of EFO setting compared to Cu wire. Spherical and residue free FAB of insulated Cu was able to form with forming gas. With a set electric flame off (EFO) setting, insulated Cu FAB consistently larger than Cu FAB. The experimental results show clearly that the energy required for the FAB formation for insulated Cu wire is ∼20{\%} lower than the Cu wire, probably due to the lesser heat loss from the wire during the EFO firing. Key bonding parameters for insulated Cu were EFO current, EFO time, bond power and bond force to meet the required ball size. This study shows that insulated Cu wire requires less demanding ball bond parameters than Cu wire, indicating softer ball which could be favorable for the sensitive bond structures. Bonding strength in term of ball shear and wire pull strength between the insulated Cu wire and Cu wire is very similar. Other key responses such as Al remnant, pad cratering and intermetallic compound have been studied and will be discussed in details in the paper. Our research successfully established good wire bonding process conditions for the insulated Cu wire and subsequently demonstrated that the technology is feasible using presently available wire bonder.",
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Leong, HY, Mohd, FZ, Ibrahim, MR, Kid, WB, Khan, N, Yap, BK & Tan, LC 2012, Development of insulated Cu wire ball bonding. in 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012., 6521829, Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012, Ipoh, Perak, Malaysia, 06/11/12. https://doi.org/10.1109/IEMT.2012.6521829

Development of insulated Cu wire ball bonding. / Leong, H. Y.; Mohd, Faizal Zulkifli; Ibrahim, Mohd Rusli; Kid, Wong Boh; Khan, Navas; Yap, Boon Kar; Tan, L. C.

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012. 2012. 6521829 (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Insulated Cu wire is the next generation technology in fine pitch and high density wire bonding, which enables wire crossing and touching without concern for wire-to-wire shorts. However, insulated Cu wire bonding is still at the infant stage compared to Cu wire bonding. This study investigates the wire bond process in term of free air ball (FAB) and ball formation using 20μm Cu wire and insulated Cu wire with target bonded ball size about 35μm. Insulated Cu wire needs a different set of EFO setting compared to Cu wire. Spherical and residue free FAB of insulated Cu was able to form with forming gas. With a set electric flame off (EFO) setting, insulated Cu FAB consistently larger than Cu FAB. The experimental results show clearly that the energy required for the FAB formation for insulated Cu wire is ∼20% lower than the Cu wire, probably due to the lesser heat loss from the wire during the EFO firing. Key bonding parameters for insulated Cu were EFO current, EFO time, bond power and bond force to meet the required ball size. This study shows that insulated Cu wire requires less demanding ball bond parameters than Cu wire, indicating softer ball which could be favorable for the sensitive bond structures. Bonding strength in term of ball shear and wire pull strength between the insulated Cu wire and Cu wire is very similar. Other key responses such as Al remnant, pad cratering and intermetallic compound have been studied and will be discussed in details in the paper. Our research successfully established good wire bonding process conditions for the insulated Cu wire and subsequently demonstrated that the technology is feasible using presently available wire bonder.

AB - Insulated Cu wire is the next generation technology in fine pitch and high density wire bonding, which enables wire crossing and touching without concern for wire-to-wire shorts. However, insulated Cu wire bonding is still at the infant stage compared to Cu wire bonding. This study investigates the wire bond process in term of free air ball (FAB) and ball formation using 20μm Cu wire and insulated Cu wire with target bonded ball size about 35μm. Insulated Cu wire needs a different set of EFO setting compared to Cu wire. Spherical and residue free FAB of insulated Cu was able to form with forming gas. With a set electric flame off (EFO) setting, insulated Cu FAB consistently larger than Cu FAB. The experimental results show clearly that the energy required for the FAB formation for insulated Cu wire is ∼20% lower than the Cu wire, probably due to the lesser heat loss from the wire during the EFO firing. Key bonding parameters for insulated Cu were EFO current, EFO time, bond power and bond force to meet the required ball size. This study shows that insulated Cu wire requires less demanding ball bond parameters than Cu wire, indicating softer ball which could be favorable for the sensitive bond structures. Bonding strength in term of ball shear and wire pull strength between the insulated Cu wire and Cu wire is very similar. Other key responses such as Al remnant, pad cratering and intermetallic compound have been studied and will be discussed in details in the paper. Our research successfully established good wire bonding process conditions for the insulated Cu wire and subsequently demonstrated that the technology is feasible using presently available wire bonder.

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Leong HY, Mohd FZ, Ibrahim MR, Kid WB, Khan N, Yap BK et al. Development of insulated Cu wire ball bonding. In 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012. 2012. 6521829. (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium). https://doi.org/10.1109/IEMT.2012.6521829